MR behavior in tunneling junctions with a nonmagnetic metal layer between barrier and electrode

Hideaki Yamanaka, Kesami Saito, Koki Takanashi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The influence of a nonmagnetic metal (Cu) layer between the barrier and the electrode in ferromagnetic tunneling junctions on magnetoresistance has been investigated. MR decreases with increasing the Cu layer thickness (tCu), however, the variations in MR at 77K with temperature and bias voltage become smaller with increasing tCu.

Original languageEnglish
Pages (from-to)2883-2885
Number of pages3
JournalIEEE Transactions on Magnetics
Volume35
Issue number5 PART 1
DOIs
Publication statusPublished - 1999 Dec 1
Externally publishedYes

Keywords

  • Bias voltage dependence
  • Ferromagnetic tunneling junction
  • Non magnetic metal layer
  • Tunneling magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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