The influence of a nonmagnetic metal (Cu) layer between the barrier and the electrode in ferromagnetic tunneling junctions on magnetoresistance has been investigated. MR decreases with increasing the Cu layer thickness (tCu), however, the variations in MR at 77K with temperature and bias voltage become smaller with increasing tCu.
- Bias voltage dependence
- Ferromagnetic tunneling junction
- Non magnetic metal layer
- Tunneling magnetoresistance
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering