MOVPE of CuGaSe2 for photovoltaic applications

T. Kampschulte, A. Bauknecht, U. Blieske, M. Saad, S. Chichibu, M. Ch Lux-Steiner

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


For the development of a CuGaSe2-based solar cell CuGaSe2 epitaxial layers were grown on GaAs(001) substrates by low-pressure metallorganic vapour phase epitaxy (MOVPE) exclusively with metallorganic precursors. X-ray diffraction (XRD) measurements revealed predominantly c[001]-oriented growth. The mean surface roughness was determined to be less than 6 nm by atomic force microscopy (AFM). Low-temperature photoluminescence (PL) at 10 K was dominated by a defect-correlated emission at 1.627 eV. Moreover, it was possible to observe near band-edge emission. All CuGaSe2 layers showed p-type conductivity with net carrier concentrations in the order of 1017 cm-3 and Hall-mobilities of approximately 30 cm2Ns.

Original languageEnglish
Pages (from-to)391-394
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Publication statusPublished - 1997 Dec 1
Externally publishedYes
EventProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA
Duration: 1997 Sep 291997 Oct 3

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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