MOVPE growth window for high-Nitrogen GaAsN alloy films for long wavelength emission

S. Sanorpim, F. Nakajima, R. Katayama, K. Onabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The high quality GaAsN epitaxial films with the typical thickness of 150-200 nm and the N contents up to 5.5% were grown by MOVPE. The maximum N content of 2.75% at the growth temperature of 550°C was enhanced to 5.1% at 500°C and 5.5% at 450°C. The lower growth temperature may efficiently suppress desorption of N atoms from the growing surface. The narrow high-resolution X-ray diffraction peaks and the clear Pendellösung fringes indicate that the GaAsN films with high uniformity and fairly flat interface were obtained. The 6K-photoluminescence (PL) peak energy of the GaAsN films was varied from 1.38 eV to 1.01 eV with increasing N content up to 2.75%, but no near-band-edge emission was observed in the higher-N-content films, indicating the increase of nonradiative recombination centers caused by the N-related lattice imperfections. Besides, after post growth thermal annealing at 650°C for 2 min, PL spectrum shows that the near-band-edge emission as low as 0.97 eV (1.3 μm) have been achieved with the film of 5.1% N.

Original languageEnglish
Title of host publicationSemiconductor Photonics
Subtitle of host publicationNano-Structured Materials and Devices
PublisherTrans Tech Publications
Pages218-220
Number of pages3
ISBN (Print)0878494715, 9780878494712
DOIs
Publication statusPublished - 2008 Jan 1
EventInternational Conference on Materials for Advanced Technologies, ICMAT 2007 - , Singapore
Duration: 2007 Jul 12007 Jul 6

Publication series

NameAdvanced Materials Research
Volume31
ISSN (Print)1022-6680

Other

OtherInternational Conference on Materials for Advanced Technologies, ICMAT 2007
CountrySingapore
Period07/7/107/7/6

Keywords

  • GaAsN
  • III-V-nitrides
  • MOVPE

ASJC Scopus subject areas

  • Engineering(all)

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