MOVPE growth of N-polar GaN/AlxGa1-xN/GaN heterostructure on small off-cut substrate for flat interface

K. Prasertsuk, S. Tanaka, T. Tanikawa, K. Shojiki, T. Kimura, A. Miura, R. Nonoda, F. Hemmi, S. Kuboya, R. Katayama, T. Suemitsu, T. Matsuoka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The smooth surface of an N-polar GaN/AlxGa1-xN/GaN heterostructure was successfully grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates with a small off-cut angle of 0.8� toward the a-plane. The 2DEG of an N-polar GaN/AlxGa1-xN/GaN heterostructure has been confirmed by Hall-effect measurement from 17 to 300 K. The sheet carrier concentration and the 2DEG mobility of this heterostructure were measured to be 1.4 � 1013 cm-2 and 1250 cm2/Vs at room temperature, respectively. The mobility monotonically increased with decreasing temperature and saturated at a value of 3050 cm2/Vs at 17 K. These values obtained in the primitive experimental show the potential of an N-polar GaN HEMT.

Original languageEnglish
Title of host publication2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509019649
DOIs
Publication statusPublished - 2016 Aug 1
Event2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan
Duration: 2016 Jun 262016 Jun 30

Publication series

Name2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

Other

Other2016 Compound Semiconductor Week, CSW 2016
CountryJapan
CityToyama
Period16/6/2616/6/30

Keywords

  • Gallium Nitride (GaN)
  • N-polar
  • heterostructure
  • mobility
  • two-dimensional electron gas (2DEG)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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