TY - GEN
T1 - MOVPE growth of N-polar GaN/AlxGa1-xN/GaN heterostructure on small off-cut substrate for flat interface
AU - Prasertsuk, K.
AU - Tanaka, S.
AU - Tanikawa, Tomoyuki
AU - Shojiki, Kanako
AU - Kimura, T.
AU - Miura, A.
AU - Nonoda, R.
AU - Hemmi, F.
AU - Kuboya, Shigeyuki
AU - Katayama, Ryuji
AU - Suemitsu, T.
AU - Matsuoka, T.
N1 - Publisher Copyright:
� 2016 IEEE.
PY - 2016/8/1
Y1 - 2016/8/1
N2 - The smooth surface of an N-polar GaN/AlxGa1-xN/GaN heterostructure was successfully grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates with a small off-cut angle of 0.8� toward the a-plane. The 2DEG of an N-polar GaN/AlxGa1-xN/GaN heterostructure has been confirmed by Hall-effect measurement from 17 to 300 K. The sheet carrier concentration and the 2DEG mobility of this heterostructure were measured to be 1.4 � 1013 cm-2 and 1250 cm2/Vs at room temperature, respectively. The mobility monotonically increased with decreasing temperature and saturated at a value of 3050 cm2/Vs at 17 K. These values obtained in the primitive experimental show the potential of an N-polar GaN HEMT.
AB - The smooth surface of an N-polar GaN/AlxGa1-xN/GaN heterostructure was successfully grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates with a small off-cut angle of 0.8� toward the a-plane. The 2DEG of an N-polar GaN/AlxGa1-xN/GaN heterostructure has been confirmed by Hall-effect measurement from 17 to 300 K. The sheet carrier concentration and the 2DEG mobility of this heterostructure were measured to be 1.4 � 1013 cm-2 and 1250 cm2/Vs at room temperature, respectively. The mobility monotonically increased with decreasing temperature and saturated at a value of 3050 cm2/Vs at 17 K. These values obtained in the primitive experimental show the potential of an N-polar GaN HEMT.
KW - Gallium Nitride (GaN)
KW - N-polar
KW - heterostructure
KW - mobility
KW - two-dimensional electron gas (2DEG)
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U2 - 10.1109/ICIPRM.2016.7528837
DO - 10.1109/ICIPRM.2016.7528837
M3 - Conference contribution
AN - SCOPUS:84992061058
T3 - 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
BT - 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 Compound Semiconductor Week, CSW 2016
Y2 - 26 June 2016 through 30 June 2016
ER -