MOVPE growth of N-polar GaN/AlxGa1-xN/GaN heterostructure on small off-cut substrate for flat interface

K. Prasertsuk; S. Tanaka; T. Tanikawa; K. Shojiki; T. Kimura; A. Miura; R. Nonoda; F. Hemmi; S. Kuboya; R. Katayama; T. Suemitsu; T. Matsuoka

doi:10.1109/ICIPRM.2016.7528837

MOVPE growth of N-polar GaN/Al_xGa_1-xN/GaN heterostructure on small off-cut substrate for flat interface

K. Prasertsuk, S. Tanaka, T. Tanikawa, K. Shojiki, T. Kimura, A. Miura, R. Nonoda, F. Hemmi, S. Kuboya, R. Katayama, T. Suemitsu, T. Matsuoka

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The smooth surface of an N-polar GaN/Al_xGa_1-xN/GaN heterostructure was successfully grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates with a small off-cut angle of 0.8ï¿½ toward the a-plane. The 2DEG of an N-polar GaN/Al_xGa_1-xN/GaN heterostructure has been confirmed by Hall-effect measurement from 17 to 300 K. The sheet carrier concentration and the 2DEG mobility of this heterostructure were measured to be 1.4 ï¿½ 10¹³ cm^-2 and 1250 cm²/Vs at room temperature, respectively. The mobility monotonically increased with decreasing temperature and saturated at a value of 3050 cm²/Vs at 17 K. These values obtained in the primitive experimental show the potential of an N-polar GaN HEMT.

Original language	English
Title of host publication	2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509019649
DOIs	https://doi.org/10.1109/ICIPRM.2016.7528837
Publication status	Published - 2016 Aug 1
Event	2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan Duration: 2016 Jun 26 → 2016 Jun 30

Publication series

Name	2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

Other

Other	2016 Compound Semiconductor Week, CSW 2016
Country	Japan
City	Toyama
Period	16/6/26 → 16/6/30

Keywords

Gallium Nitride (GaN)
N-polar
heterostructure
mobility
two-dimensional electron gas (2DEG)

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ICIPRM.2016.7528837

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Prasertsuk, K., Tanaka, S., Tanikawa, T., Shojiki, K., Kimura, T., Miura, A., Nonoda, R., Hemmi, F., Kuboya, S., Katayama, R., Suemitsu, T., & Matsuoka, T. (2016). MOVPE growth of N-polar GaN/Al_xGa_1-xN/GaN heterostructure on small off-cut substrate for flat interface. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 [7528837] (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2016.7528837

MOVPE growth of N-polar GaN/Al_xGa_1-xN/GaN heterostructure on small off-cut substrate for flat interface. / Prasertsuk, K.; Tanaka, S.; Tanikawa, T.; Shojiki, K.; Kimura, T.; Miura, A.; Nonoda, R.; Hemmi, F.; Kuboya, S.; Katayama, R.; Suemitsu, T.; Matsuoka, T.

2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7528837 (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Prasertsuk, K, Tanaka, S, Tanikawa, T, Shojiki, K, Kimura, T, Miura, A, Nonoda, R, Hemmi, F, Kuboya, S, Katayama, R, Suemitsu, T & Matsuoka, T 2016, MOVPE growth of N-polar GaN/Al_xGa_1-xN/GaN heterostructure on small off-cut substrate for flat interface. in 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016., 7528837, 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, Institute of Electrical and Electronics Engineers Inc., 2016 Compound Semiconductor Week, CSW 2016, Toyama, Japan, 16/6/26. https://doi.org/10.1109/ICIPRM.2016.7528837

Prasertsuk K, Tanaka S, Tanikawa T, Shojiki K, Kimura T, Miura A et al. MOVPE growth of N-polar GaN/Al_xGa_1-xN/GaN heterostructure on small off-cut substrate for flat interface. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7528837. (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016). https://doi.org/10.1109/ICIPRM.2016.7528837

Prasertsuk, K. ; Tanaka, S. ; Tanikawa, T. ; Shojiki, K. ; Kimura, T. ; Miura, A. ; Nonoda, R. ; Hemmi, F. ; Kuboya, S. ; Katayama, R. ; Suemitsu, T. ; Matsuoka, T. / MOVPE growth of N-polar GaN/Al_xGa_1-xN/GaN heterostructure on small off-cut substrate for flat interface. 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016).

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abstract = "The smooth surface of an N-polar GaN/AlxGa1-xN/GaN heterostructure was successfully grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates with a small off-cut angle of 0.8{\"i}¿½ toward the a-plane. The 2DEG of an N-polar GaN/AlxGa1-xN/GaN heterostructure has been confirmed by Hall-effect measurement from 17 to 300 K. The sheet carrier concentration and the 2DEG mobility of this heterostructure were measured to be 1.4 {\"i}¿½ 1013 cm-2 and 1250 cm2/Vs at room temperature, respectively. The mobility monotonically increased with decreasing temperature and saturated at a value of 3050 cm2/Vs at 17 K. These values obtained in the primitive experimental show the potential of an N-polar GaN HEMT.",

keywords = "Gallium Nitride (GaN), N-polar, heterostructure, mobility, two-dimensional electron gas (2DEG)",

author = "K. Prasertsuk and S. Tanaka and T. Tanikawa and K. Shojiki and T. Kimura and A. Miura and R. Nonoda and F. Hemmi and S. Kuboya and R. Katayama and T. Suemitsu and T. Matsuoka",

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doi = "10.1109/ICIPRM.2016.7528837",

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AU - Shojiki, K.

AU - Kimura, T.

AU - Miura, A.

AU - Nonoda, R.

AU - Hemmi, F.

AU - Kuboya, S.

AU - Katayama, R.

AU - Suemitsu, T.

AU - Matsuoka, T.

PY - 2016/8/1

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N2 - The smooth surface of an N-polar GaN/AlxGa1-xN/GaN heterostructure was successfully grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates with a small off-cut angle of 0.8ï¿½ toward the a-plane. The 2DEG of an N-polar GaN/AlxGa1-xN/GaN heterostructure has been confirmed by Hall-effect measurement from 17 to 300 K. The sheet carrier concentration and the 2DEG mobility of this heterostructure were measured to be 1.4 ï¿½ 1013 cm-2 and 1250 cm2/Vs at room temperature, respectively. The mobility monotonically increased with decreasing temperature and saturated at a value of 3050 cm2/Vs at 17 K. These values obtained in the primitive experimental show the potential of an N-polar GaN HEMT.

AB - The smooth surface of an N-polar GaN/AlxGa1-xN/GaN heterostructure was successfully grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates with a small off-cut angle of 0.8ï¿½ toward the a-plane. The 2DEG of an N-polar GaN/AlxGa1-xN/GaN heterostructure has been confirmed by Hall-effect measurement from 17 to 300 K. The sheet carrier concentration and the 2DEG mobility of this heterostructure were measured to be 1.4 ï¿½ 1013 cm-2 and 1250 cm2/Vs at room temperature, respectively. The mobility monotonically increased with decreasing temperature and saturated at a value of 3050 cm2/Vs at 17 K. These values obtained in the primitive experimental show the potential of an N-polar GaN HEMT.

KW - Gallium Nitride (GaN)

KW - N-polar

KW - heterostructure

KW - mobility

KW - two-dimensional electron gas (2DEG)

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