MOVPE growth of InPN films on InP(001) substrates

Yuki Seki, Yanzhe Wang, Quang Tu Thieu, Shigeyuki Kuboya, Sakuntam Sanorpim, Kentaro Onabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Dilute-nitride alloy InPN films have been grown by metalorganic vapor phase epitaxy (MOVPE), and the N incorporation behavior is investigated by varying the major growth parameters. The grown-surface morphologies show that the 2-dimensional (2D) growth with atomically flat surfaces is obtained at 460-500°C with relatively high P supplies. The XRD analyses show that the N incorporation increases for lower growth temperatures and higher N/P ratios, and the N concentration up to 0.18% has been attained. The 150-170 nm-thick InPN films are coherently grown on InP(001) without lattice relaxation.

Original languageEnglish
Title of host publication2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
Pages220-223
Number of pages4
DOIs
Publication statusPublished - 2010 Aug 30
Event22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan
Duration: 2010 May 312010 Jun 4

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

Other22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
CountryJapan
CityKagawa
Period10/5/3110/6/4

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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