MOVPE growth of InN films using 1,1-dimethylhydrazine as a nitrogen precursor

Quang Tu Thieu, Yuki Seki, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


InN films have been successfully grown on sapphire substrates by MOVPE using trimethylindium (TMIn) and 1,1-dimethylhydrazine (DMHy) with N2 carrier. DMHy is an advantageous precursor of N as it decomposes efficiently at relatively low temperature (T50=420 °C) compatible with the InN growth. The reactor is specially designed so as to avoid parasitic reaction between TMIn and DMHy occurring at room temperature. The growth feature was studied by varying growth temperature, V/III ratio, TMIn flow and reactor pressure. The InN films were obtained at 500-570 °C and 60-200 Torr with a V/III ratio optimized to 100-200. The In droplets are seen on the grown surfaces, indicating an excess supply of TMIn. It is demonstrated that the InN films grows on the sapphire substrate in a single domain with an epitaxial relationship, [1 01̄ 0]InN//[1 1 2̄ 0]sapphire.

Original languageEnglish
Pages (from-to)2802-2805
Number of pages4
JournalJournal of Crystal Growth
Issue number10
Publication statusPublished - 2009 May 1


  • A3. Metalorganic vapor phase epitaxy
  • B1. Dimethylhydrazine
  • B1. Indium nitride
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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