TY - JOUR
T1 - MOVPE growth of InN
T2 - A comparison between a horizontal and a vertical reactor
AU - Liu, Yuhuai
AU - Kimura, Takeshi
AU - Shimada, Taka Aki
AU - Hirata, Masaki
AU - Wakaba, Masaki
AU - Nakao, Masashi
AU - Ji, Shi Yang
AU - Matsuoka, Takashi
PY - 2009/7/1
Y1 - 2009/7/1
N2 - The MOVPE growth of InN by a horizontal reactor is compared with that by a vertical reactor. The phase diagram does not almost depend on the reactor structure, but rather the parameters such as V/III ratio and the growth temperature. The growth rate of InN in the horizontal reactor significantly increases in comparison with the vertical reactor due to the reduction of the stagnant layer thickness, the increases in the source supply to the substrate surface and the high concentration of source gases by narrowing flow channel. For the horizontal reactor, the polycrystalline phase appeared in the case of the low carrier-gas flow-rate and disappeared for the high carrier-gas flow-rate. These data suggest that increasing the carrier gas flow rate can suppress the gas phase reactions. In the case of the horizontal reactor, InN can be obtained at temperatures as high as 625 °C, compared with the maximum growth temperature of 575 °C in the vertical reactor. But the growth rates significantly decrease above 600 °C.
AB - The MOVPE growth of InN by a horizontal reactor is compared with that by a vertical reactor. The phase diagram does not almost depend on the reactor structure, but rather the parameters such as V/III ratio and the growth temperature. The growth rate of InN in the horizontal reactor significantly increases in comparison with the vertical reactor due to the reduction of the stagnant layer thickness, the increases in the source supply to the substrate surface and the high concentration of source gases by narrowing flow channel. For the horizontal reactor, the polycrystalline phase appeared in the case of the low carrier-gas flow-rate and disappeared for the high carrier-gas flow-rate. These data suggest that increasing the carrier gas flow rate can suppress the gas phase reactions. In the case of the horizontal reactor, InN can be obtained at temperatures as high as 625 °C, compared with the maximum growth temperature of 575 °C in the vertical reactor. But the growth rates significantly decrease above 600 °C.
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U2 - 10.1002/pssc.200880914
DO - 10.1002/pssc.200880914
M3 - Article
AN - SCOPUS:74549134534
VL - 6
SP - S381-S384
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1862-6351
IS - SUPPL. 2
ER -