MOVPE growth and optical characterization of InGaAsN T-shaped quantum wires lattice-matched to GaAs

Pawinee Klangtakai, Sakuntam Sanorpim, Ryuji Katayama, Kentaro Onabe

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

InGaAsN T-shaped quantum wire (T-QWR) lattice-matched to GaAs was grown by metal organic vapour-phase epitaxy (MOVPE) and its optical property was investigated. The InGaAsN T-QWR was observed at the intersection of two InGaAsN quantum wells (QWs) on (001) and (110) surfaces, namely QW1 and QW2, respectively. In, N contents and wellthickness in QW1 and QW2 were determined by high resolution X-ray diffraction (HRXRD). Photoluminescence (PL) was taken to obtain excitonic states in the one-dimensional T-QWR as well as QW1 and QW2. High PL intensity reveals an achievement of high quality T-QWR. At low-temperature, InGaAsN T-QWR exhibits an emission at around 1.141 eV with a large lateral confinement of about 61 and 99 meV for QW1 and QW2, respectively. This method for producing InGaAsN TQWR may be useful for optical or electronic device applications.

Original languageEnglish
Pages (from-to)1418-1420
Number of pages3
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume207
Issue number6
DOIs
Publication statusPublished - 2010 Jun

Keywords

  • Excitons
  • Growth
  • InGaAsN
  • MOVPE
  • Photoluminescence
  • Quantum wires

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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