Abstract
InGaAsN T-shaped quantum wire (T-QWR) lattice-matched to GaAs was grown by metal organic vapour-phase epitaxy (MOVPE) and its optical property was investigated. The InGaAsN T-QWR was observed at the intersection of two InGaAsN quantum wells (QWs) on (001) and (110) surfaces, namely QW1 and QW2, respectively. In, N contents and wellthickness in QW1 and QW2 were determined by high resolution X-ray diffraction (HRXRD). Photoluminescence (PL) was taken to obtain excitonic states in the one-dimensional T-QWR as well as QW1 and QW2. High PL intensity reveals an achievement of high quality T-QWR. At low-temperature, InGaAsN T-QWR exhibits an emission at around 1.141 eV with a large lateral confinement of about 61 and 99 meV for QW1 and QW2, respectively. This method for producing InGaAsN TQWR may be useful for optical or electronic device applications.
| Original language | English |
|---|---|
| Pages (from-to) | 1418-1420 |
| Number of pages | 3 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 207 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2010 Jun |
Keywords
- Excitons
- Growth
- InGaAsN
- MOVPE
- Photoluminescence
- Quantum wires
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry