MOVPE growth and optical characterization of GaAsN films with higher nitrogen concentrations

F. Nakajima, S. Sanorpim, W. Ono, R. Katayama, K. Onabe

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


We have successfully grown high-N-content GaAsN films up to 5.1% on GaAs(001) substrates using tertiarybutylarsine (TBAs) as the As precursor by metalorganic vapour phase epitaxy (MOVPE). The narrow X-ray diffraction (XRD) peaks and clear Pendellosung fringes indicate that the GaAsN/GaAs interface is fairly flat and the GaAsN layers are uniform. By the photoluminescence (PL) measurement at 10 K, the clear PL peaks related to the near-band-edge transition could be detected and the bandgap energy was redshifted to 1.16 eV in 1.9%-N GaAsN film. But, in higher N-content films no peak could be detected. So, post growth annealing in the reactor was applied to 4.7% and 5.1%-N films, and resulted in an enhancement of the PL peak intensity, and the bandgap energy of 5.1%-N film was consequently determined to be 0.95 eV at room temperature.

Original languageEnglish
Pages (from-to)1641-1644
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number7
Publication statusPublished - 2006 May 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'MOVPE growth and optical characterization of GaAsN films with higher nitrogen concentrations'. Together they form a unique fingerprint.

Cite this