MOVPE growth and characterization of high-N content InGaPN alloy lattice-matched to GaP

S. Sanorpim; F. Nakajima; Ryuji Katayama; N. Nakadan; T. Kimura; K. Onabe; Y. Shiraki

doi:10.1002/pssc.200303505

MOVPE growth and characterization of high-N content InGaPN alloy lattice-matched to GaP

S. Sanorpim, F. Nakajima, Ryuji Katayama, N. Nakadan, T. Kimura, K. Onabe, Y. Shiraki

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

In_x Ga_1-xP_1-yN_y (x = 17.6%, 0 < y ≤ 8.7%) alloy films have been grown on GaP(001) substrates by low-pressure (60 Torr) metalorganic vapor phase epitaxy (MOVPE). Structural and optical properties of the InGaPN films have been investigated. With incorporation of N, a reduction of compressive strain and a strong red shift in both the photoluminescence (PL) peak energy and the absorption edge of PL excitation (PLE) were clearly observed. The residual strain sufficiently relaxes for films with low N contents (0% ≤ y < 3.4%). Whereas, for higher N concentrations (3.4% < y ≤ 8.7%), the InGaPN layers were coherently grown on the GaP (001) substrates. Lattice-matched InGaPN films with N content as high as 7.4% corresponding to a 10 K absorption wavelength of 610.8 nm (2.03 eV) have been obtained.

Original language	English
Pages (from-to)	2773-2777
Number of pages	5
Journal	Physica Status Solidi C: Conferences
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200303505
Publication status	Published - 2003 Dec 1
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: 2003 May 25 → 2003 May 30

ASJC Scopus subject areas

Condensed Matter Physics

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title = "MOVPE growth and characterization of high-N content InGaPN alloy lattice-matched to GaP",

abstract = "Inx Ga1-xP1-yNy (x = 17.6%, 0 < y ≤ 8.7%) alloy films have been grown on GaP(001) substrates by low-pressure (60 Torr) metalorganic vapor phase epitaxy (MOVPE). Structural and optical properties of the InGaPN films have been investigated. With incorporation of N, a reduction of compressive strain and a strong red shift in both the photoluminescence (PL) peak energy and the absorption edge of PL excitation (PLE) were clearly observed. The residual strain sufficiently relaxes for films with low N contents (0% ≤ y < 3.4%). Whereas, for higher N concentrations (3.4% < y ≤ 8.7%), the InGaPN layers were coherently grown on the GaP (001) substrates. Lattice-matched InGaPN films with N content as high as 7.4% corresponding to a 10 K absorption wavelength of 610.8 nm (2.03 eV) have been obtained.",

author = "S. Sanorpim and F. Nakajima and Ryuji Katayama and N. Nakadan and T. Kimura and K. Onabe and Y. Shiraki",

year = "2003",

month = dec,

day = "1",

doi = "10.1002/pssc.200303505",

language = "English",

pages = "2773--2777",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

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note = "5th International Conference on Nitride Semiconductors, ICNS 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

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TY - JOUR

T1 - MOVPE growth and characterization of high-N content InGaPN alloy lattice-matched to GaP

AU - Sanorpim, S.

AU - Nakajima, F.

AU - Katayama, Ryuji

AU - Nakadan, N.

AU - Kimura, T.

AU - Onabe, K.

AU - Shiraki, Y.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Inx Ga1-xP1-yNy (x = 17.6%, 0 < y ≤ 8.7%) alloy films have been grown on GaP(001) substrates by low-pressure (60 Torr) metalorganic vapor phase epitaxy (MOVPE). Structural and optical properties of the InGaPN films have been investigated. With incorporation of N, a reduction of compressive strain and a strong red shift in both the photoluminescence (PL) peak energy and the absorption edge of PL excitation (PLE) were clearly observed. The residual strain sufficiently relaxes for films with low N contents (0% ≤ y < 3.4%). Whereas, for higher N concentrations (3.4% < y ≤ 8.7%), the InGaPN layers were coherently grown on the GaP (001) substrates. Lattice-matched InGaPN films with N content as high as 7.4% corresponding to a 10 K absorption wavelength of 610.8 nm (2.03 eV) have been obtained.

AB - Inx Ga1-xP1-yNy (x = 17.6%, 0 < y ≤ 8.7%) alloy films have been grown on GaP(001) substrates by low-pressure (60 Torr) metalorganic vapor phase epitaxy (MOVPE). Structural and optical properties of the InGaPN films have been investigated. With incorporation of N, a reduction of compressive strain and a strong red shift in both the photoluminescence (PL) peak energy and the absorption edge of PL excitation (PLE) were clearly observed. The residual strain sufficiently relaxes for films with low N contents (0% ≤ y < 3.4%). Whereas, for higher N concentrations (3.4% < y ≤ 8.7%), the InGaPN layers were coherently grown on the GaP (001) substrates. Lattice-matched InGaPN films with N content as high as 7.4% corresponding to a 10 K absorption wavelength of 610.8 nm (2.03 eV) have been obtained.

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U2 - 10.1002/pssc.200303505

DO - 10.1002/pssc.200303505

M3 - Conference article

AN - SCOPUS:84875104787

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EP - 2777

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

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T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

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