TY - JOUR
T1 - MOVPE growth and characterization of high-N content InGaPN alloy lattice-matched to GaP
AU - Sanorpim, S.
AU - Nakajima, F.
AU - Katayama, Ryuji
AU - Nakadan, N.
AU - Kimura, T.
AU - Onabe, K.
AU - Shiraki, Y.
PY - 2003/12/1
Y1 - 2003/12/1
N2 - Inx Ga1-xP1-yNy (x = 17.6%, 0 < y ≤ 8.7%) alloy films have been grown on GaP(001) substrates by low-pressure (60 Torr) metalorganic vapor phase epitaxy (MOVPE). Structural and optical properties of the InGaPN films have been investigated. With incorporation of N, a reduction of compressive strain and a strong red shift in both the photoluminescence (PL) peak energy and the absorption edge of PL excitation (PLE) were clearly observed. The residual strain sufficiently relaxes for films with low N contents (0% ≤ y < 3.4%). Whereas, for higher N concentrations (3.4% < y ≤ 8.7%), the InGaPN layers were coherently grown on the GaP (001) substrates. Lattice-matched InGaPN films with N content as high as 7.4% corresponding to a 10 K absorption wavelength of 610.8 nm (2.03 eV) have been obtained.
AB - Inx Ga1-xP1-yNy (x = 17.6%, 0 < y ≤ 8.7%) alloy films have been grown on GaP(001) substrates by low-pressure (60 Torr) metalorganic vapor phase epitaxy (MOVPE). Structural and optical properties of the InGaPN films have been investigated. With incorporation of N, a reduction of compressive strain and a strong red shift in both the photoluminescence (PL) peak energy and the absorption edge of PL excitation (PLE) were clearly observed. The residual strain sufficiently relaxes for films with low N contents (0% ≤ y < 3.4%). Whereas, for higher N concentrations (3.4% < y ≤ 8.7%), the InGaPN layers were coherently grown on the GaP (001) substrates. Lattice-matched InGaPN films with N content as high as 7.4% corresponding to a 10 K absorption wavelength of 610.8 nm (2.03 eV) have been obtained.
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U2 - 10.1002/pssc.200303505
DO - 10.1002/pssc.200303505
M3 - Conference article
AN - SCOPUS:84875104787
SP - 2773
EP - 2777
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1862-6351
IS - 7
T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003
Y2 - 25 May 2003 through 30 May 2003
ER -