Abstract
Inx Ga1-xP1-yNy (x = 17.6%, 0 < y ≤ 8.7%) alloy films have been grown on GaP(001) substrates by low-pressure (60 Torr) metalorganic vapor phase epitaxy (MOVPE). Structural and optical properties of the InGaPN films have been investigated. With incorporation of N, a reduction of compressive strain and a strong red shift in both the photoluminescence (PL) peak energy and the absorption edge of PL excitation (PLE) were clearly observed. The residual strain sufficiently relaxes for films with low N contents (0% ≤ y < 3.4%). Whereas, for higher N concentrations (3.4% < y ≤ 8.7%), the InGaPN layers were coherently grown on the GaP (001) substrates. Lattice-matched InGaPN films with N content as high as 7.4% corresponding to a 10 K absorption wavelength of 610.8 nm (2.03 eV) have been obtained.
Original language | English |
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Pages (from-to) | 2773-2777 |
Number of pages | 5 |
Journal | Physica Status Solidi C: Conferences |
Issue number | 7 |
DOIs | |
Publication status | Published - 2003 |
Externally published | Yes |
Event | 5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: 2003 May 25 → 2003 May 30 |
ASJC Scopus subject areas
- Condensed Matter Physics