MOVPE growth and characterization of high-N content InGaPN alloy lattice-matched to GaP

S. Sanorpim, F. Nakajima, Ryuji Katayama, N. Nakadan, T. Kimura, K. Onabe, Y. Shiraki

Research output: Contribution to journalConference articlepeer-review

10 Citations (Scopus)

Abstract

Inx Ga1-xP1-yNy (x = 17.6%, 0 < y ≤ 8.7%) alloy films have been grown on GaP(001) substrates by low-pressure (60 Torr) metalorganic vapor phase epitaxy (MOVPE). Structural and optical properties of the InGaPN films have been investigated. With incorporation of N, a reduction of compressive strain and a strong red shift in both the photoluminescence (PL) peak energy and the absorption edge of PL excitation (PLE) were clearly observed. The residual strain sufficiently relaxes for films with low N contents (0% ≤ y < 3.4%). Whereas, for higher N concentrations (3.4% < y ≤ 8.7%), the InGaPN layers were coherently grown on the GaP (001) substrates. Lattice-matched InGaPN films with N content as high as 7.4% corresponding to a 10 K absorption wavelength of 610.8 nm (2.03 eV) have been obtained.

Original languageEnglish
Pages (from-to)2773-2777
Number of pages5
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
Publication statusPublished - 2003 Dec 1
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

ASJC Scopus subject areas

  • Condensed Matter Physics

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