Fast Atom Beam processing methods e. g. etching and sputter deposition are easily applicable to isolation materials because charge up does not occur in the process. A fast beam processing method has been applied to sputter deposition, and is called Fast Atom Bombardment Sputter Deposition. In this work, a new chemical composition control method for MoSx deposited film has been studied using a Mo-S complex target developed by the authors. Moreover, crystalline and friction characteristics of film obtained using this method are examined.
|Number of pages||6|
|Publication status||Published - 1983 Dec 1|
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