MOSFET nonvolatile memory with high-density cobalt-nanodots floating gate and HfO\bf 2 High-k blocking dielectric

Yanli Pei, Chengkuan Yin, Toshiya Kojima, Ji Cheol Bea, Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

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Engineering & Materials Science