MOS-FETs FABRICATED BY SPE-SOI TECHNOLOGY.

K. Kusukawa; M. Moniwa; E. Murakami; M. Miyao; T. Warabisako; Y. Wada

doi:10.7567/ssdm.1987.c-1-2

MOS-FETs FABRICATED BY SPE-SOI TECHNOLOGY.

K. Kusukawa, M. Moniwa, E. Murakami, M. Miyao, T. Warabisako, Y. Wada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Electrical characterisitics of Si layers on SiO//2 obtained by seeded-lateral solid phase epitaxy were evaluated as a function of distance from the seeding area. According to the two growth modes in lateral epitaxy, it was found that there are significant difference in the electrical characteristics of MOSFETs fabricated in those regions. A field effect (electron) mobility of about 700cm**2/Vs was obtained for n-channel MOSFETs fabricated in the left brace 110 right brace -facet grown region. However, the electrical properties of MOSFETs fabricated in the left brace 111 right brace -facet growth region were not as good. The results suggest that the left brace 110 right brace -facet growth region is suitable for devices with a feature size of less than 2 mu m.

Original language	English
Title of host publication	Conference on Solid State Devices and Materials
Publisher	Japan Soc of Applied Physics
Pages	179-182
Number of pages	4
ISBN (Print)	4930813212, 9784930813213
DOIs	https://doi.org/10.7567/ssdm.1987.c-1-2
Publication status	Published - 1987

Publication series

Name	Conference on Solid State Devices and Materials

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.7567/ssdm.1987.c-1-2

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Cite this

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title = "MOS-FETs FABRICATED BY SPE-SOI TECHNOLOGY.",

abstract = "Electrical characterisitics of Si layers on SiO//2 obtained by seeded-lateral solid phase epitaxy were evaluated as a function of distance from the seeding area. According to the two growth modes in lateral epitaxy, it was found that there are significant difference in the electrical characteristics of MOSFETs fabricated in those regions. A field effect (electron) mobility of about 700cm**2/Vs was obtained for n-channel MOSFETs fabricated in the left brace 110 right brace -facet grown region. However, the electrical properties of MOSFETs fabricated in the left brace 111 right brace -facet growth region were not as good. The results suggest that the left brace 110 right brace -facet growth region is suitable for devices with a feature size of less than 2 mu m.",

author = "K. Kusukawa and M. Moniwa and E. Murakami and M. Miyao and T. Warabisako and Y. Wada",

year = "1987",

doi = "10.7567/ssdm.1987.c-1-2",

language = "English",

isbn = "4930813212",

series = "Conference on Solid State Devices and Materials",

publisher = "Japan Soc of Applied Physics",

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T1 - MOS-FETs FABRICATED BY SPE-SOI TECHNOLOGY.

AU - Kusukawa, K.

AU - Moniwa, M.

AU - Murakami, E.

AU - Miyao, M.

AU - Warabisako, T.

AU - Wada, Y.

PY - 1987

Y1 - 1987

N2 - Electrical characterisitics of Si layers on SiO//2 obtained by seeded-lateral solid phase epitaxy were evaluated as a function of distance from the seeding area. According to the two growth modes in lateral epitaxy, it was found that there are significant difference in the electrical characteristics of MOSFETs fabricated in those regions. A field effect (electron) mobility of about 700cm**2/Vs was obtained for n-channel MOSFETs fabricated in the left brace 110 right brace -facet grown region. However, the electrical properties of MOSFETs fabricated in the left brace 111 right brace -facet growth region were not as good. The results suggest that the left brace 110 right brace -facet growth region is suitable for devices with a feature size of less than 2 mu m.

AB - Electrical characterisitics of Si layers on SiO//2 obtained by seeded-lateral solid phase epitaxy were evaluated as a function of distance from the seeding area. According to the two growth modes in lateral epitaxy, it was found that there are significant difference in the electrical characteristics of MOSFETs fabricated in those regions. A field effect (electron) mobility of about 700cm**2/Vs was obtained for n-channel MOSFETs fabricated in the left brace 110 right brace -facet grown region. However, the electrical properties of MOSFETs fabricated in the left brace 111 right brace -facet growth region were not as good. The results suggest that the left brace 110 right brace -facet growth region is suitable for devices with a feature size of less than 2 mu m.

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