TY - GEN
T1 - MOS-FETs FABRICATED BY SPE-SOI TECHNOLOGY.
AU - Kusukawa, K.
AU - Moniwa, M.
AU - Murakami, E.
AU - Miyao, M.
AU - Warabisako, T.
AU - Wada, Y.
PY - 1987
Y1 - 1987
N2 - Electrical characterisitics of Si layers on SiO//2 obtained by seeded-lateral solid phase epitaxy were evaluated as a function of distance from the seeding area. According to the two growth modes in lateral epitaxy, it was found that there are significant difference in the electrical characteristics of MOSFETs fabricated in those regions. A field effect (electron) mobility of about 700cm**2/Vs was obtained for n-channel MOSFETs fabricated in the left brace 110 right brace -facet grown region. However, the electrical properties of MOSFETs fabricated in the left brace 111 right brace -facet growth region were not as good. The results suggest that the left brace 110 right brace -facet growth region is suitable for devices with a feature size of less than 2 mu m.
AB - Electrical characterisitics of Si layers on SiO//2 obtained by seeded-lateral solid phase epitaxy were evaluated as a function of distance from the seeding area. According to the two growth modes in lateral epitaxy, it was found that there are significant difference in the electrical characteristics of MOSFETs fabricated in those regions. A field effect (electron) mobility of about 700cm**2/Vs was obtained for n-channel MOSFETs fabricated in the left brace 110 right brace -facet grown region. However, the electrical properties of MOSFETs fabricated in the left brace 111 right brace -facet growth region were not as good. The results suggest that the left brace 110 right brace -facet growth region is suitable for devices with a feature size of less than 2 mu m.
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U2 - 10.7567/ssdm.1987.c-1-2
DO - 10.7567/ssdm.1987.c-1-2
M3 - Conference contribution
AN - SCOPUS:0023537699
SN - 4930813212
SN - 9784930813213
T3 - Conference on Solid State Devices and Materials
SP - 179
EP - 182
BT - Conference on Solid State Devices and Materials
PB - Japan Soc of Applied Physics
ER -