Morphology of hydrofluoric acid and ammonium fluoride-treated silicon surfaces studied by surface infrared spectroscopy

M. Niwano, Y. Takeda, Y. Ishibashi, K. Kurita, N. Miyamoto

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37 Citations (Scopus)

Abstract

Morphologies of Si surfaces treated with aqueous solutions of hydrofluoric acid (HF) and ammonium fluoride (NH4F) have been investigated using surface infrared spectroscopy. We confirm that HF-treated Si(111) surfaces are terminated with a monohydride (Si - H), dihydride (Si - H2), and trihydride (Si-H3), whereas NH4F-treated Si(111) surfaces are dominantly terminated with Si - H. For Si(100), treatment in NH4F produces a surface for which the dihydride mode is enhanced compared to HF treatment, suggesting that surface Si - Si bonds on Si(100) are readily cleaved in a NH4F solution to generate a dihydride Si. The effect of varying the HF concentration on the morphology of HF-treated Si(100) surfaces is investigated. It is demonstrated that 5% HF treatment produces Si(100) surfaces which have a larger density of surface Si - Si bonds than 50% HF or 0.5% HF treatment.

Original languageEnglish
Pages (from-to)5646-5649
Number of pages4
JournalJournal of Applied Physics
Volume71
Issue number11
DOIs
Publication statusPublished - 1992 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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