Morphology and characterization of GaN single crystals grown in a Na flux

Hisanori Yamane; Masahiko Shimada; Takashi Sekiguchi; Francis J. DiSalvo

doi:10.1016/S0022-0248(97)00480-6

Morphology and characterization of GaN single crystals grown in a Na flux

Hisanori Yamane, Masahiko Shimada, Takashi Sekiguchi, Francis J. DiSalvo

Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

132 Citations (Scopus)

Abstract

Morphology of GaN single crystals grown in a Na flux at 750°C for 100 h was observed by scanning electron microscopy. It changed from prismatic to platelet and fine grains with increasing r_Na = Na/(Na + Ga) molar ratio of starting materials. Hall measurement was carried out for GaN single crystals with a size of 0.4-0.7 mm. The electron concentration and mobility were about 10²⁰ cm^-3 and 10-100 cm² V^-1 s_-1 at room temperature. The near band-edge emission of GaN was observed at 363 nm by cathodoluminescence spectroscopy.

Original language	English
Pages (from-to)	8-12
Number of pages	5
Journal	Journal of Crystal Growth
Volume	186
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(97)00480-6
Publication status	Published - 1998 Mar 1

Keywords

Cathodoluminescence spectroscopy
Electric property
GaN single crystals
Morphology

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(97)00480-6

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title = "Morphology and characterization of GaN single crystals grown in a Na flux",

abstract = "Morphology of GaN single crystals grown in a Na flux at 750°C for 100 h was observed by scanning electron microscopy. It changed from prismatic to platelet and fine grains with increasing rNa = Na/(Na + Ga) molar ratio of starting materials. Hall measurement was carried out for GaN single crystals with a size of 0.4-0.7 mm. The electron concentration and mobility were about 1020 cm-3 and 10-100 cm2 V-1 s-1 at room temperature. The near band-edge emission of GaN was observed at 363 nm by cathodoluminescence spectroscopy.",

keywords = "Cathodoluminescence spectroscopy, Electric property, GaN single crystals, Morphology",

author = "Hisanori Yamane and Masahiko Shimada and Takashi Sekiguchi and DiSalvo, {Francis J.}",

note = "Funding Information: We would like to thank Dr. S. Miyazawa and Dr. H.J. Scheel for valuable discussion, N. Sato and M. Wakeshima of IAMP for hall measurements. We are also grateful to K. Sawane of Toyo Kasei Kogyo for a gift of NaN3. This work was supported in part by the Ministry of Education, Science, Culture and Sports, Japan through a Grant-in-Aid for Scientific Research.",

year = "1998",

month = mar,

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doi = "10.1016/S0022-0248(97)00480-6",

language = "English",

volume = "186",

pages = "8--12",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-2",

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TY - JOUR

T1 - Morphology and characterization of GaN single crystals grown in a Na flux

AU - Yamane, Hisanori

AU - Shimada, Masahiko

AU - Sekiguchi, Takashi

AU - DiSalvo, Francis J.

N1 - Funding Information: We would like to thank Dr. S. Miyazawa and Dr. H.J. Scheel for valuable discussion, N. Sato and M. Wakeshima of IAMP for hall measurements. We are also grateful to K. Sawane of Toyo Kasei Kogyo for a gift of NaN3. This work was supported in part by the Ministry of Education, Science, Culture and Sports, Japan through a Grant-in-Aid for Scientific Research.

PY - 1998/3/1

Y1 - 1998/3/1

N2 - Morphology of GaN single crystals grown in a Na flux at 750°C for 100 h was observed by scanning electron microscopy. It changed from prismatic to platelet and fine grains with increasing rNa = Na/(Na + Ga) molar ratio of starting materials. Hall measurement was carried out for GaN single crystals with a size of 0.4-0.7 mm. The electron concentration and mobility were about 1020 cm-3 and 10-100 cm2 V-1 s-1 at room temperature. The near band-edge emission of GaN was observed at 363 nm by cathodoluminescence spectroscopy.

AB - Morphology of GaN single crystals grown in a Na flux at 750°C for 100 h was observed by scanning electron microscopy. It changed from prismatic to platelet and fine grains with increasing rNa = Na/(Na + Ga) molar ratio of starting materials. Hall measurement was carried out for GaN single crystals with a size of 0.4-0.7 mm. The electron concentration and mobility were about 1020 cm-3 and 10-100 cm2 V-1 s-1 at room temperature. The near band-edge emission of GaN was observed at 363 nm by cathodoluminescence spectroscopy.

KW - Cathodoluminescence spectroscopy

KW - Electric property

KW - GaN single crystals

KW - Morphology

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U2 - 10.1016/S0022-0248(97)00480-6

DO - 10.1016/S0022-0248(97)00480-6

M3 - Article

AN - SCOPUS:0032022835

VL - 186

SP - 8

EP - 12

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-2

ER -

Morphology and characterization of GaN single crystals grown in a Na flux

Abstract

Keywords

ASJC Scopus subject areas

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