Morphology and characterization of GaN single crystals grown in a Na flux

Hisanori Yamane; Masahiko Shimada; Takashi Sekiguchi; Francis J. DiSalvo

doi:10.1016/S0022-0248(97)00480-6

Morphology and characterization of GaN single crystals grown in a Na flux

Hisanori Yamane, Masahiko Shimada, Takashi Sekiguchi, Francis J. DiSalvo

Center for Exploration of New Inorganic Materials

Research output: Contribution to journal › Article › peer-review

128 Citations (Scopus)

Abstract

Morphology of GaN single crystals grown in a Na flux at 750°C for 100 h was observed by scanning electron microscopy. It changed from prismatic to platelet and fine grains with increasing r_Na = Na/(Na + Ga) molar ratio of starting materials. Hall measurement was carried out for GaN single crystals with a size of 0.4-0.7 mm. The electron concentration and mobility were about 10²⁰ cm^-3 and 10-100 cm² V^-1 s_-1 at room temperature. The near band-edge emission of GaN was observed at 363 nm by cathodoluminescence spectroscopy.

Original language	English
Pages (from-to)	8-12
Number of pages	5
Journal	Journal of Crystal Growth
Volume	186
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(97)00480-6
Publication status	Published - 1998 Mar 1

Keywords

Cathodoluminescence spectroscopy
Electric property
GaN single crystals
Morphology

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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abstract = "Morphology of GaN single crystals grown in a Na flux at 750°C for 100 h was observed by scanning electron microscopy. It changed from prismatic to platelet and fine grains with increasing rNa = Na/(Na + Ga) molar ratio of starting materials. Hall measurement was carried out for GaN single crystals with a size of 0.4-0.7 mm. The electron concentration and mobility were about 1020 cm-3 and 10-100 cm2 V-1 s-1 at room temperature. The near band-edge emission of GaN was observed at 363 nm by cathodoluminescence spectroscopy.",

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T1 - Morphology and characterization of GaN single crystals grown in a Na flux

AU - Yamane, Hisanori

AU - Shimada, Masahiko

AU - Sekiguchi, Takashi

AU - DiSalvo, Francis J.

PY - 1998/3/1

Y1 - 1998/3/1

N2 - Morphology of GaN single crystals grown in a Na flux at 750°C for 100 h was observed by scanning electron microscopy. It changed from prismatic to platelet and fine grains with increasing rNa = Na/(Na + Ga) molar ratio of starting materials. Hall measurement was carried out for GaN single crystals with a size of 0.4-0.7 mm. The electron concentration and mobility were about 1020 cm-3 and 10-100 cm2 V-1 s-1 at room temperature. The near band-edge emission of GaN was observed at 363 nm by cathodoluminescence spectroscopy.

AB - Morphology of GaN single crystals grown in a Na flux at 750°C for 100 h was observed by scanning electron microscopy. It changed from prismatic to platelet and fine grains with increasing rNa = Na/(Na + Ga) molar ratio of starting materials. Hall measurement was carried out for GaN single crystals with a size of 0.4-0.7 mm. The electron concentration and mobility were about 1020 cm-3 and 10-100 cm2 V-1 s-1 at room temperature. The near band-edge emission of GaN was observed at 363 nm by cathodoluminescence spectroscopy.

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KW - Electric property

KW - GaN single crystals

KW - Morphology

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