Abstract
Morphology of GaN single crystals grown in a Na flux at 750°C for 100 h was observed by scanning electron microscopy. It changed from prismatic to platelet and fine grains with increasing rNa = Na/(Na + Ga) molar ratio of starting materials. Hall measurement was carried out for GaN single crystals with a size of 0.4-0.7 mm. The electron concentration and mobility were about 1020 cm-3 and 10-100 cm2 V-1 s-1 at room temperature. The near band-edge emission of GaN was observed at 363 nm by cathodoluminescence spectroscopy.
Original language | English |
---|---|
Pages (from-to) | 8-12 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 186 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 1998 Mar 1 |
Keywords
- Cathodoluminescence spectroscopy
- Electric property
- GaN single crystals
- Morphology
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry