Morphology and characterization of GaN single crystals grown in a Na flux

Hisanori Yamane, Masahiko Shimada, Takashi Sekiguchi, Francis J. DiSalvo

Research output: Contribution to journalArticlepeer-review

128 Citations (Scopus)

Abstract

Morphology of GaN single crystals grown in a Na flux at 750°C for 100 h was observed by scanning electron microscopy. It changed from prismatic to platelet and fine grains with increasing rNa = Na/(Na + Ga) molar ratio of starting materials. Hall measurement was carried out for GaN single crystals with a size of 0.4-0.7 mm. The electron concentration and mobility were about 1020 cm-3 and 10-100 cm2 V-1 s-1 at room temperature. The near band-edge emission of GaN was observed at 363 nm by cathodoluminescence spectroscopy.

Original languageEnglish
Pages (from-to)8-12
Number of pages5
JournalJournal of Crystal Growth
Volume186
Issue number1-2
DOIs
Publication statusPublished - 1998 Mar 1

Keywords

  • Cathodoluminescence spectroscopy
  • Electric property
  • GaN single crystals
  • Morphology

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Morphology and characterization of GaN single crystals grown in a Na flux'. Together they form a unique fingerprint.

Cite this