Abstract
Chromium nitride films were prepared by anodically oxidizing nitride ions at 0.4-1.5 V versus Li+/Li on chromium substrates in molten LiCl-KCl-Li3N systems at 723 K. A crystalline Cr2N film was successfully prepared at 0.4-1.4 V, and was thicker at more positive electrolytic potential. At 1.5 V, a Cr-N film could be also obtained, but its growth rate was relatively low. The film prepared at 1.5 V consisted of two distinctive layers. The surface layer was amorphous Cr-N containing crystalline CrN particles, and the inner layer was crystalline CrN. It was considered the existence of the amorphous phase suppressed the film growth.
Original language | English |
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Pages (from-to) | 122-126 |
Number of pages | 5 |
Journal | Electrochimica Acta |
Volume | 53 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2007 Nov 20 |
Keywords
- Chromium nitride
- Electrochemical nitriding
- Molten salt
- Morphology
- Nitride film
ASJC Scopus subject areas
- Chemical Engineering(all)
- Electrochemistry