Morphologic and crystallographic studies on electrochemically formed chromium nitride films

Koji Amezawa; Takuya Goto; Hiroyuki Tsujimura; Yoshiharu Uchimoto; Rika Hagiwara; Yoichi Tomii; Yasuhiko Ito

doi:10.1016/j.electacta.2007.06.013

Morphologic and crystallographic studies on electrochemically formed chromium nitride films

Koji Amezawa, Takuya Goto, Hiroyuki Tsujimura, Yoshiharu Uchimoto, Rika Hagiwara, Yoichi Tomii, Yasuhiko Ito

Division of Process and System Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Chromium nitride films were prepared by anodically oxidizing nitride ions at 0.4-1.5 V versus Li⁺/Li on chromium substrates in molten LiCl-KCl-Li₃N systems at 723 K. A crystalline Cr₂N film was successfully prepared at 0.4-1.4 V, and was thicker at more positive electrolytic potential. At 1.5 V, a Cr-N film could be also obtained, but its growth rate was relatively low. The film prepared at 1.5 V consisted of two distinctive layers. The surface layer was amorphous Cr-N containing crystalline CrN particles, and the inner layer was crystalline CrN. It was considered the existence of the amorphous phase suppressed the film growth.

Original language	English
Pages (from-to)	122-126
Number of pages	5
Journal	Electrochimica Acta
Volume	53
Issue number	1
DOIs	https://doi.org/10.1016/j.electacta.2007.06.013
Publication status	Published - 2007 Nov 20

Keywords

Chromium nitride
Electrochemical nitriding
Molten salt
Morphology
Nitride film

ASJC Scopus subject areas

Chemical Engineering(all)
Electrochemistry

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10.1016/j.electacta.2007.06.013

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@article{e26054495d3e479eb8e43a85be484b9d,

title = "Morphologic and crystallographic studies on electrochemically formed chromium nitride films",

abstract = "Chromium nitride films were prepared by anodically oxidizing nitride ions at 0.4-1.5 V versus Li+/Li on chromium substrates in molten LiCl-KCl-Li3N systems at 723 K. A crystalline Cr2N film was successfully prepared at 0.4-1.4 V, and was thicker at more positive electrolytic potential. At 1.5 V, a Cr-N film could be also obtained, but its growth rate was relatively low. The film prepared at 1.5 V consisted of two distinctive layers. The surface layer was amorphous Cr-N containing crystalline CrN particles, and the inner layer was crystalline CrN. It was considered the existence of the amorphous phase suppressed the film growth.",

keywords = "Chromium nitride, Electrochemical nitriding, Molten salt, Morphology, Nitride film",

author = "Koji Amezawa and Takuya Goto and Hiroyuki Tsujimura and Yoshiharu Uchimoto and Rika Hagiwara and Yoichi Tomii and Yasuhiko Ito",

note = "Funding Information: This work was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology.",

year = "2007",

month = nov,

day = "20",

doi = "10.1016/j.electacta.2007.06.013",

language = "English",

volume = "53",

pages = "122--126",

journal = "Electrochimica Acta",

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publisher = "Elsevier Limited",

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TY - JOUR

T1 - Morphologic and crystallographic studies on electrochemically formed chromium nitride films

AU - Amezawa, Koji

AU - Goto, Takuya

AU - Tsujimura, Hiroyuki

AU - Uchimoto, Yoshiharu

AU - Hagiwara, Rika

AU - Tomii, Yoichi

AU - Ito, Yasuhiko

N1 - Funding Information: This work was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology.

PY - 2007/11/20

Y1 - 2007/11/20

N2 - Chromium nitride films were prepared by anodically oxidizing nitride ions at 0.4-1.5 V versus Li+/Li on chromium substrates in molten LiCl-KCl-Li3N systems at 723 K. A crystalline Cr2N film was successfully prepared at 0.4-1.4 V, and was thicker at more positive electrolytic potential. At 1.5 V, a Cr-N film could be also obtained, but its growth rate was relatively low. The film prepared at 1.5 V consisted of two distinctive layers. The surface layer was amorphous Cr-N containing crystalline CrN particles, and the inner layer was crystalline CrN. It was considered the existence of the amorphous phase suppressed the film growth.

AB - Chromium nitride films were prepared by anodically oxidizing nitride ions at 0.4-1.5 V versus Li+/Li on chromium substrates in molten LiCl-KCl-Li3N systems at 723 K. A crystalline Cr2N film was successfully prepared at 0.4-1.4 V, and was thicker at more positive electrolytic potential. At 1.5 V, a Cr-N film could be also obtained, but its growth rate was relatively low. The film prepared at 1.5 V consisted of two distinctive layers. The surface layer was amorphous Cr-N containing crystalline CrN particles, and the inner layer was crystalline CrN. It was considered the existence of the amorphous phase suppressed the film growth.

KW - Chromium nitride

KW - Electrochemical nitriding

KW - Molten salt

KW - Morphology

KW - Nitride film

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U2 - 10.1016/j.electacta.2007.06.013

DO - 10.1016/j.electacta.2007.06.013

M3 - Article

AN - SCOPUS:34548592235

VL - 53

SP - 122

EP - 126

JO - Electrochimica Acta

JF - Electrochimica Acta

SN - 0013-4686

IS - 1

ER -

Morphologic and crystallographic studies on electrochemically formed chromium nitride films

Abstract

Keywords

ASJC Scopus subject areas

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