More than 400 times electron emission enhancement at low vacuum and very low accelerating voltage by selecting suitable cathode material

M. Hussein Mourad; S. Kumagai; S. Samukawa

doi:10.1109/IVMC.2003.1223089

More than 400 times electron emission enhancement at low vacuum and very low accelerating voltage by selecting suitable cathode material

M. Hussein Mourad, S. Kumagai, S. Samukawa

Innovative Energy Research Center

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Technical Digest of the 16th International Vacuum Microelectronics Conference, IVMC 2003
Editors	Mikio Takai, Junzo Ishikawa, Yasuhito Gotoh
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	273-274
Number of pages	2
ISBN (Electronic)	4818195154, 9784818195158
DOIs	https://doi.org/10.1109/IVMC.2003.1223089
Publication status	Published - 2003
Event	16th International Vacuum Microelectronics Conference, IVMC 2003 - Toyonaka, Osaka, Japan Duration: 2003 Jul 7 → 2003 Jul 11

Publication series

Name	Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Volume	2003-January

Other

Other	16th International Vacuum Microelectronics Conference, IVMC 2003
Country	Japan
City	Toyonaka, Osaka
Period	03/7/7 → 03/7/11

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IVMC.2003.1223089

Cite this

Mourad, M. H., Kumagai, S., & Samukawa, S. (2003). More than 400 times electron emission enhancement at low vacuum and very low accelerating voltage by selecting suitable cathode material. In M. Takai, J. Ishikawa, & Y. Gotoh (Eds.), Technical Digest of the 16th International Vacuum Microelectronics Conference, IVMC 2003 (pp. 273-274). [1223089] (Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVMC.2003.1223089

More than 400 times electron emission enhancement at low vacuum and very low accelerating voltage by selecting suitable cathode material. / Mourad, M. Hussein; Kumagai, S.; Samukawa, S.

Technical Digest of the 16th International Vacuum Microelectronics Conference, IVMC 2003. ed. / Mikio Takai; Junzo Ishikawa; Yasuhito Gotoh. Institute of Electrical and Electronics Engineers Inc., 2003. p. 273-274 1223089 (Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mourad, MH, Kumagai, S & Samukawa, S 2003, More than 400 times electron emission enhancement at low vacuum and very low accelerating voltage by selecting suitable cathode material. in M Takai, J Ishikawa & Y Gotoh (eds), Technical Digest of the 16th International Vacuum Microelectronics Conference, IVMC 2003., 1223089, Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 273-274, 16th International Vacuum Microelectronics Conference, IVMC 2003, Toyonaka, Osaka, Japan, 03/7/7. https://doi.org/10.1109/IVMC.2003.1223089

Mourad MH, Kumagai S, Samukawa S. More than 400 times electron emission enhancement at low vacuum and very low accelerating voltage by selecting suitable cathode material. In Takai M, Ishikawa J, Gotoh Y, editors, Technical Digest of the 16th International Vacuum Microelectronics Conference, IVMC 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 273-274. 1223089. (Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC). https://doi.org/10.1109/IVMC.2003.1223089

Mourad, M. Hussein ; Kumagai, S. ; Samukawa, S. / More than 400 times electron emission enhancement at low vacuum and very low accelerating voltage by selecting suitable cathode material. Technical Digest of the 16th International Vacuum Microelectronics Conference, IVMC 2003. editor / Mikio Takai ; Junzo Ishikawa ; Yasuhito Gotoh. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 273-274 (Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC).

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