Monte Carlo simulation of reentrant reflection high-energy electron diffraction intensity oscillation observed during low-temperature GaAs growth

Haruyuki Yasuda, Hideo Ohno

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Monte Carlo simulation was performed on low temperature (LT)-GaAs growth with an As self-surfactant effect, in which surface diffusion of Ga adatoms is assumed to be enhanced by the excess As adsorbed on the As-stabilized GaAs (001) surfaces. Simulation results show good quantitative agreement with the experimental results: the simulation reproduces both the reentrant behavior of the temperature dependence of reflection high-energy electron diffraction (RHEED) oscillation and the V/III ratio dependence at low temperatures observed by experiments.

Original languageEnglish
Pages (from-to)3275-3277
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number22
DOIs
Publication statusPublished - 1999 May 31

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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