Monte Carlo modeling of Si(1 0 0) roughening due to adsorbate-adsorbate repulsion

C. M. Aldao, S. E. Guidoni, G. J. Xu, Koji S. Nakayama, J. H. Weaver

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

The pits and Si regrowth islands that form during the roughening of Si(100) by Cl at 700 K have characteristic patterns that depend on the amount of adsorbed Cl, suggesting the importance of adsorbate-adsorbate steric repulsive interactions. Monte Carlo simulations of roughening focused on those interactions. While the resulting morphology resembles those observed at intermediate coverage, the inability of the simulations to reproduce the experiment results at low coverage indicates that other interactions must be considered, including strain anisotropies that would favor the formation of large features.

Original languageEnglish
Pages (from-to)143-149
Number of pages7
JournalSurface Science
Volume551
Issue number1-2
DOIs
Publication statusPublished - 2004 Feb 20

Keywords

  • Halogens
  • Monte Carlo simulations
  • Silicon
  • Surface roughening
  • Surface structure, morphology, roughness, and topography

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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