Abstract
A new light source with a light beam steering mechanism is proposed for Optical MEMS. The propose device is composed of GaN light source and a movable stage. The direction of the light beam emitted from the GaN light source can be changed by the stage with the comb drive actuators. We deposited the GaN films on Si substrate by molecular beam epitaxy (MBE) and fabricated a movable stage by Si micromachining. The displacement of the Si stage was measured to be 50 um at the voltage of 100V and photoluminescence (PL) from the GaN light source was observed while moving the stage.
| Original language | English |
|---|---|
| Pages | 1375-1377 |
| Number of pages | 3 |
| Publication status | Published - 2007 Dec 1 |
| Event | 14th International Display Workshops, IDW '07 - Sapporo, Japan Duration: 2007 Dec 5 → 2007 Dec 5 |
Other
| Other | 14th International Display Workshops, IDW '07 |
|---|---|
| Country | Japan |
| City | Sapporo |
| Period | 07/12/5 → 07/12/5 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
- Atomic and Molecular Physics, and Optics
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Ito, R., Hu, F. R., Wakui, M., & Hane, K. (2007). Monolithic fabrication of GaN/Si structure for optical MEMS. 1375-1377. Paper presented at 14th International Display Workshops, IDW '07, Sapporo, Japan.