Monolithic fabrication of GaN/Si structure for optical MEMS

R. Ito, F. R. Hu, M. Wakui, Kazuhiro Hane

Research output: Contribution to conferencePaper

Abstract

A new light source with a light beam steering mechanism is proposed for Optical MEMS. The propose device is composed of GaN light source and a movable stage. The direction of the light beam emitted from the GaN light source can be changed by the stage with the comb drive actuators. We deposited the GaN films on Si substrate by molecular beam epitaxy (MBE) and fabricated a movable stage by Si micromachining. The displacement of the Si stage was measured to be 50 um at the voltage of 100V and photoluminescence (PL) from the GaN light source was observed while moving the stage.

Original languageEnglish
Pages1375-1377
Number of pages3
Publication statusPublished - 2007 Dec 1
Event14th International Display Workshops, IDW '07 - Sapporo, Japan
Duration: 2007 Dec 52007 Dec 5

Other

Other14th International Display Workshops, IDW '07
CountryJapan
CitySapporo
Period07/12/507/12/5

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Ito, R., Hu, F. R., Wakui, M., & Hane, K. (2007). Monolithic fabrication of GaN/Si structure for optical MEMS. 1375-1377. Paper presented at 14th International Display Workshops, IDW '07, Sapporo, Japan.