Monolithic displacement encoder sensor integrating GaN LED and Si photodiodes

S. Nagai, Takashi Sasaki, H. Kawaguchi, A. Iwabuchi, Kazuhiro Hane

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A GaN blue light emitting diode (LED) and Si photodiodes (PDs) are integrated monolithically on Si substrate for a micro optical displacement encoder sensor. A GaN-LED crystal layer was grown epitaxially on a Si substrate. Si pn-junction was formed subsequently on the Si substrate by P ion implantation. Therefore, all components necessary for the encoder sensor are integrated on a Si chip after patterning encoder gratings. The blue light is useful for improving diffraction effect and suitable for Si photodetector.

Original languageEnglish
Title of host publication2013 Transducers and Eurosensors XXVII
Subtitle of host publicationThe 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013
Pages972-975
Number of pages4
DOIs
Publication statusPublished - 2013 Dec 1
Event2013 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013 - Barcelona, Spain
Duration: 2013 Jun 162013 Jun 20

Publication series

Name2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013

Other

Other2013 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013
CountrySpain
CityBarcelona
Period13/6/1613/6/20

Keywords

  • Displacement Sensor
  • GaN-LED
  • MEMS Fabrication
  • Monolithic Integration

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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