Mono-like silicon growth using functional grain boundaries to limit area of multicrystalline grains

Kentaro Kutsukake, Noritaka Usami, Yutaka Ohno, Yuki Tokumoto, Ichiro Yonenaga

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

We propose a new growth method for mono-like silicon (Si): the suppression of multicrystallization using functional grain boundaries artificially formed by multiseed crystals. In our previous study, we demonstrated such suppression in an ingot 30 mm in diameter. In this paper, we grew mono-like Si ingots of 100 and 400 mm on a side. Functional grain boundaries successfully suppressed the increase in the area of multicrystalline grains nucleated on crucible side walls, which indicates a large volume of quasi-monocrystalline Si up to the top of the ingots. This enables a large increase in the yield of quasi-monocrystalline wafers in an ingot and would lead to a reduction in the cost of the solar cells.

Original languageEnglish
Article number6615989
Pages (from-to)84-87
Number of pages4
JournalIEEE Journal of Photovoltaics
Volume4
Issue number1
DOIs
Publication statusPublished - 2014 Jan

Keywords

  • Crystal growth
  • grain boundary (GB)
  • mono-cast
  • mono-like Si
  • multicrystalline Si
  • quasi-mono
  • seeded cast

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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