Abstract
A new low pressure chemical vapor deposition apparatus for molybdenum film formation by the hydrogen reduction of molybdenum pentachloride is developed. The apparatus realizes the uniformity of film thickness within plus or minus 5% for 25 wafers per batch and molybdenum film formation without oxidation. It is found that the deposition rate is controlled by surface reaction up to a higher temperature than that under atmospheric pressure and is proportional to the 3/2 power of hydrogen partial pressure in the region of surface reaction.
| Original language | English |
|---|---|
| Pages (from-to) | 615-617 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 22 |
| Issue number | 10 |
| Publication status | Published - 1983 Jan 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)