Molecular layer epitaxy of GaAs

Jun ichi Nishizawa, Hiroshi Sakuraba, Yutaka Oyama

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


The surface reaction mechanism of trimethylgallium (TMG) on GaAs is investigated using quadrupole mass spectroscopy (QMS). The present QMS measurements, which concern only the surface reaction itself, distinguish the surface reaction of TMG on {100}-oriented GaAs as being of two types. By taking into account the QMS results for the {111} Ga and {111} As surfaces, the surface reaction mechanism on GaAs is discussed. These results are applicable to the molecular layer epitaxy (MLE) of GaAs of high purity.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 1993 Mar 25
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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