Molecular dyanamics simulation of thermal chemical vapor deposition for hydrogenated amorphous silicon on si (100) substrate by reactive force-field

Naoya Uene, Takuya Mabuchi, Masaru Zaitsu, Shigeo Yasuhara, Takashi Tokumasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We calculate a deposition process of hydrogenated amorphous silicon (a-Si:H) films on a silicon (100) substrate by reactive force-field molecular dynamics simulations. The influences of (a) substrate temperatures and (b) coverage of hydrogen atoms on the substrate on the adsorption probability are investigated, and it is found out that (a) the adsorption probability is almost constant for SiH2 and SiH3, but decrease with increase in the substrate temperature for SiH4, (b) it decreases with the increase in hydrogen coverage.

Original languageEnglish
Title of host publicationProceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
EditorsFrancesco Driussi
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728109404
DOIs
Publication statusPublished - 2019 Sep
Event24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 - Udine, Italy
Duration: 2019 Sep 42019 Sep 6

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2019-September

Conference

Conference24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
CountryItaly
CityUdine
Period19/9/419/9/6

Keywords

  • Chemical Vapor Deposition
  • Reactive Force-Field Molecular Dynamics Simulation
  • Reactive Sticking Coefficient
  • Surface Reaction
  • Surface-Covering Bonded Hydrogen

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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  • Cite this

    Uene, N., Mabuchi, T., Zaitsu, M., Yasuhara, S., & Tokumasu, T. (2019). Molecular dyanamics simulation of thermal chemical vapor deposition for hydrogenated amorphous silicon on si (100) substrate by reactive force-field. In F. Driussi (Ed.), Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 [8870438] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2019-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2019.8870438