MOLECULAR DESIGN FOR CROSS-LINKING NEGATIVE RESISTS: OPTIMUM DESIGN FOR POLY(CHLOROMETHYLSTYRENE-CO-2-VINYLNAPHTHALENE).

Yoshitake Ohnishi, Katsumi Tanigaki, Akihiro Furuta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Poly(chloromethylstyrene-co-2-vinylnapthalene) has been developed as a negative electron resist. Optimum design method for this material is presented, which is based on theoretical analysis for copolymer sensitivity and on dry etch rate dependence on polymer structure by a series of experiments. A resist with high sensitivity, high resolution and high dry etch resistance was obtained.

Original languageEnglish
Title of host publicationACS Symposium Series
PublisherACS
Pages191-200
Number of pages10
ISBN (Print)0841208239
Publication statusPublished - 1984 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)

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  • Cite this

    Ohnishi, Y., Tanigaki, K., & Furuta, A. (1984). MOLECULAR DESIGN FOR CROSS-LINKING NEGATIVE RESISTS: OPTIMUM DESIGN FOR POLY(CHLOROMETHYLSTYRENE-CO-2-VINYLNAPHTHALENE). In ACS Symposium Series (pp. 191-200). ACS.