Poly(chloromethylstyrene-co-2-vinylnapthalene) has been developed as a negative electron resist. Optimum design method for this material is presented, which is based on theoretical analysis for copolymer sensitivity and on dry etch rate dependence on polymer structure by a series of experiments. A resist with high sensitivity, high resolution and high dry etch resistance was obtained.
|Title of host publication||ACS Symposium Series|
|Number of pages||10|
|Publication status||Published - 1984 Dec 1|
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