Abstract
The preparation of hexagonal GaN:Mn and GaN:Fe epilayers has been studied by RF-plasma-assisted molecular beam epitaxy. GaN:Fe epilayers exhibit superparamagnetic behavior, presumably due to ferromagnetic inclusions. GaN:Mn epilayers can be expressed in the form of Ga1-xMnxN with x up to 0.02, indicating the successful preparation of the GaN-based magnetic alloy semiconductor for the first time. The epilayers are primarily paramagnetic and highly resistive. For epilayers with very high Mn concentration (∼ 1021 cm-3), analysis of the paramagnetic component has revealed the effective spin number S ≈ 2.5 together with the positive paramagnetic Curie temperature. This suggests the presence of ferromagnetic spin exchange between Mn ions.
Original language | English |
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Pages (from-to) | L724-L727 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 40 |
Issue number | 7 B |
DOIs | |
Publication status | Published - 2001 Jul 15 |
Keywords
- Diluted magnetic semiconductors
- GaN
- III-V compound semiconductors
- Magnetic alloy semiconductors
- Molecular beam epitaxy
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)