Molecular beam epitaxy of wurtzite GaN-based magnetic alloy semiconductors

Seiji Kuwabara, Tsuyoshi Kondo, Toyohiro Chikyow, Parhat Ahmet, Hiroo Munekata

Research output: Contribution to journalArticle

79 Citations (Scopus)

Abstract

The preparation of hexagonal GaN:Mn and GaN:Fe epilayers has been studied by RF-plasma-assisted molecular beam epitaxy. GaN:Fe epilayers exhibit superparamagnetic behavior, presumably due to ferromagnetic inclusions. GaN:Mn epilayers can be expressed in the form of Ga1-xMnxN with x up to 0.02, indicating the successful preparation of the GaN-based magnetic alloy semiconductor for the first time. The epilayers are primarily paramagnetic and highly resistive. For epilayers with very high Mn concentration (∼ 1021 cm-3), analysis of the paramagnetic component has revealed the effective spin number S ≈ 2.5 together with the positive paramagnetic Curie temperature. This suggests the presence of ferromagnetic spin exchange between Mn ions.

Original languageEnglish
Pages (from-to)L724-L727
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number7 B
DOIs
Publication statusPublished - 2001 Jul 15

Keywords

  • Diluted magnetic semiconductors
  • GaN
  • III-V compound semiconductors
  • Magnetic alloy semiconductors
  • Molecular beam epitaxy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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