Molecular beam epitaxy of wurtzite GaN-based magnetic alloy semiconductors

Seiji Kuwabara; Tsuyoshi Kondo; Toyohiro Chikyow; Parhat Ahmet; Hiroo Munekata

doi:10.1143/jjap.40.l724

Molecular beam epitaxy of wurtzite GaN-based magnetic alloy semiconductors

Seiji Kuwabara, Tsuyoshi Kondo, Toyohiro Chikyow, Parhat Ahmet, Hiroo Munekata

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

83 Citations (Scopus)

Abstract

The preparation of hexagonal GaN:Mn and GaN:Fe epilayers has been studied by RF-plasma-assisted molecular beam epitaxy. GaN:Fe epilayers exhibit superparamagnetic behavior, presumably due to ferromagnetic inclusions. GaN:Mn epilayers can be expressed in the form of Ga_1-xMn_xN with x up to 0.02, indicating the successful preparation of the GaN-based magnetic alloy semiconductor for the first time. The epilayers are primarily paramagnetic and highly resistive. For epilayers with very high Mn concentration (∼ 10²¹ cm^-3), analysis of the paramagnetic component has revealed the effective spin number S ≈ 2.5 together with the positive paramagnetic Curie temperature. This suggests the presence of ferromagnetic spin exchange between Mn ions.

Original language	English
Pages (from-to)	L724-L727
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	40
Issue number	7 B
DOIs	https://doi.org/10.1143/jjap.40.l724
Publication status	Published - 2001 Jul 15

Keywords

Diluted magnetic semiconductors
GaN
III-V compound semiconductors
Magnetic alloy semiconductors
Molecular beam epitaxy

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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title = "Molecular beam epitaxy of wurtzite GaN-based magnetic alloy semiconductors",

abstract = "The preparation of hexagonal GaN:Mn and GaN:Fe epilayers has been studied by RF-plasma-assisted molecular beam epitaxy. GaN:Fe epilayers exhibit superparamagnetic behavior, presumably due to ferromagnetic inclusions. GaN:Mn epilayers can be expressed in the form of Ga1-xMnxN with x up to 0.02, indicating the successful preparation of the GaN-based magnetic alloy semiconductor for the first time. The epilayers are primarily paramagnetic and highly resistive. For epilayers with very high Mn concentration (∼ 1021 cm-3), analysis of the paramagnetic component has revealed the effective spin number S ≈ 2.5 together with the positive paramagnetic Curie temperature. This suggests the presence of ferromagnetic spin exchange between Mn ions.",

keywords = "Diluted magnetic semiconductors, GaN, III-V compound semiconductors, Magnetic alloy semiconductors, Molecular beam epitaxy",

author = "Seiji Kuwabara and Tsuyoshi Kondo and Toyohiro Chikyow and Parhat Ahmet and Hiroo Munekata",

year = "2001",

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doi = "10.1143/jjap.40.l724",

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T1 - Molecular beam epitaxy of wurtzite GaN-based magnetic alloy semiconductors

AU - Kuwabara, Seiji

AU - Kondo, Tsuyoshi

AU - Chikyow, Toyohiro

AU - Ahmet, Parhat

AU - Munekata, Hiroo

PY - 2001/7/15

Y1 - 2001/7/15

N2 - The preparation of hexagonal GaN:Mn and GaN:Fe epilayers has been studied by RF-plasma-assisted molecular beam epitaxy. GaN:Fe epilayers exhibit superparamagnetic behavior, presumably due to ferromagnetic inclusions. GaN:Mn epilayers can be expressed in the form of Ga1-xMnxN with x up to 0.02, indicating the successful preparation of the GaN-based magnetic alloy semiconductor for the first time. The epilayers are primarily paramagnetic and highly resistive. For epilayers with very high Mn concentration (∼ 1021 cm-3), analysis of the paramagnetic component has revealed the effective spin number S ≈ 2.5 together with the positive paramagnetic Curie temperature. This suggests the presence of ferromagnetic spin exchange between Mn ions.

AB - The preparation of hexagonal GaN:Mn and GaN:Fe epilayers has been studied by RF-plasma-assisted molecular beam epitaxy. GaN:Fe epilayers exhibit superparamagnetic behavior, presumably due to ferromagnetic inclusions. GaN:Mn epilayers can be expressed in the form of Ga1-xMnxN with x up to 0.02, indicating the successful preparation of the GaN-based magnetic alloy semiconductor for the first time. The epilayers are primarily paramagnetic and highly resistive. For epilayers with very high Mn concentration (∼ 1021 cm-3), analysis of the paramagnetic component has revealed the effective spin number S ≈ 2.5 together with the positive paramagnetic Curie temperature. This suggests the presence of ferromagnetic spin exchange between Mn ions.

KW - Diluted magnetic semiconductors

KW - GaN

KW - III-V compound semiconductors

KW - Magnetic alloy semiconductors

KW - Molecular beam epitaxy

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DO - 10.1143/jjap.40.l724

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 7 B

ER -

Molecular beam epitaxy of wurtzite GaN-based magnetic alloy semiconductors

Abstract

Keywords

ASJC Scopus subject areas

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