TY - JOUR
T1 - Molecular beam epitaxy of superconducting Sn1-xInxTe thin films
AU - Masuko, M.
AU - Yoshimi, R.
AU - Tsukazaki, A.
AU - Kawamura, M.
AU - Takahashi, K. S.
AU - Kawasaki, M.
AU - Tokura, Y.
N1 - Funding Information:
We are grateful to M. Kriener and M. Uchida for useful discussions. This work was supported by JSPS/MEXT KAKENHI (Grants No. JP15H05853, No. JP17H04846, No. JP18H01155, No. JP18H04229, and No. JP19J22547) and JST CREST (Grants No. JPMJCR16F1 and No. JPMJCR1874).
PY - 2020/9
Y1 - 2020/9
N2 - We report a systematic study on the growth conditions of Sn1-xInxTe thin films by molecular beam epitaxy for maximization of superconducting transition temperature Tc. Careful tuning of the flux ratios of Sn, In, and Te enables us to find an optimum condition for substituting rich In content (x=0.66) into the Sn site in a single phase of Sn1-xInxTe beyond the bulk solubility limit at ambient pressure (x=0.5). Tc shows a dome-shaped dependence on In content x with the highest Tc=4.20K at x=0.55, being consistent to that reported for bulk crystals. The well-regulated Sn1-xInxTe films can be a useful platform to study possible topological superconductivity by integrating them into the state-of-the-art junctions and/or proximity-coupled devices.
AB - We report a systematic study on the growth conditions of Sn1-xInxTe thin films by molecular beam epitaxy for maximization of superconducting transition temperature Tc. Careful tuning of the flux ratios of Sn, In, and Te enables us to find an optimum condition for substituting rich In content (x=0.66) into the Sn site in a single phase of Sn1-xInxTe beyond the bulk solubility limit at ambient pressure (x=0.5). Tc shows a dome-shaped dependence on In content x with the highest Tc=4.20K at x=0.55, being consistent to that reported for bulk crystals. The well-regulated Sn1-xInxTe films can be a useful platform to study possible topological superconductivity by integrating them into the state-of-the-art junctions and/or proximity-coupled devices.
UR - http://www.scopus.com/inward/record.url?scp=85092575924&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85092575924&partnerID=8YFLogxK
U2 - 10.1103/PhysRevMaterials.4.091202
DO - 10.1103/PhysRevMaterials.4.091202
M3 - Article
AN - SCOPUS:85092575924
VL - 4
JO - Physical Review Materials
JF - Physical Review Materials
SN - 2475-9953
IS - 9
M1 - 091202
ER -