We report a systematic study on the growth conditions of Sn1-xInxTe thin films by molecular beam epitaxy for maximization of superconducting transition temperature Tc. Careful tuning of the flux ratios of Sn, In, and Te enables us to find an optimum condition for substituting rich In content (x=0.66) into the Sn site in a single phase of Sn1-xInxTe beyond the bulk solubility limit at ambient pressure (x=0.5). Tc shows a dome-shaped dependence on In content x with the highest Tc=4.20K at x=0.55, being consistent to that reported for bulk crystals. The well-regulated Sn1-xInxTe films can be a useful platform to study possible topological superconductivity by integrating them into the state-of-the-art junctions and/or proximity-coupled devices.
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy (miscellaneous)