Molecular beam epitaxy of MnSb/MnAs multilayers on GaAs

K. Ono; T. Uragami; Masaki Mizuguchi; H. Fujioka; M. Oshima; M. Tanaka; H. Akinaga

doi:10.1016/S0022-0248(99)00619-3

Molecular beam epitaxy of MnSb/MnAs multilayers on GaAs

K. Ono, T. Uragami, Masaki Mizuguchi, H. Fujioka, M. Oshima, M. Tanaka, H. Akinaga

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

We have investigated the initial growth of MnSb and MnAs films and multilayers on GaAs(1 0 0) and (1 1 1)B substrates by molecular beam epitaxy (MBE) and successfully grown epitaxial MnSb/MnAs multilayers on GaAs(1 1 1)B. We propose a possibility of the novel heat-induced giant magnetoresistance (GMR) effect in the MnSb/MnAs multilayer system.

Original language	English
Pages (from-to)	556-560
Number of pages	5
Journal	Journal of Crystal Growth
Volume	209
Issue number	2-3
DOIs	https://doi.org/10.1016/S0022-0248(99)00619-3
Publication status	Published - 2000 Jan 1
Externally published	Yes
Event	The 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques - Tsukuba, Jpn Duration: 1999 Jul 28 → 1999 Jul 30

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(99)00619-3

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title = "Molecular beam epitaxy of MnSb/MnAs multilayers on GaAs",

abstract = "We have investigated the initial growth of MnSb and MnAs films and multilayers on GaAs(1 0 0) and (1 1 1)B substrates by molecular beam epitaxy (MBE) and successfully grown epitaxial MnSb/MnAs multilayers on GaAs(1 1 1)B. We propose a possibility of the novel heat-induced giant magnetoresistance (GMR) effect in the MnSb/MnAs multilayer system.",

author = "K. Ono and T. Uragami and Masaki Mizuguchi and H. Fujioka and M. Oshima and M. Tanaka and H. Akinaga",

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TY - JOUR

T1 - Molecular beam epitaxy of MnSb/MnAs multilayers on GaAs

AU - Ono, K.

AU - Uragami, T.

AU - Mizuguchi, Masaki

AU - Fujioka, H.

AU - Oshima, M.

AU - Tanaka, M.

AU - Akinaga, H.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - We have investigated the initial growth of MnSb and MnAs films and multilayers on GaAs(1 0 0) and (1 1 1)B substrates by molecular beam epitaxy (MBE) and successfully grown epitaxial MnSb/MnAs multilayers on GaAs(1 1 1)B. We propose a possibility of the novel heat-induced giant magnetoresistance (GMR) effect in the MnSb/MnAs multilayer system.

AB - We have investigated the initial growth of MnSb and MnAs films and multilayers on GaAs(1 0 0) and (1 1 1)B substrates by molecular beam epitaxy (MBE) and successfully grown epitaxial MnSb/MnAs multilayers on GaAs(1 1 1)B. We propose a possibility of the novel heat-induced giant magnetoresistance (GMR) effect in the MnSb/MnAs multilayer system.

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UR - http://www.scopus.com/inward/citedby.url?scp=0034140179&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(99)00619-3

DO - 10.1016/S0022-0248(99)00619-3

M3 - Conference article

AN - SCOPUS:0034140179

SN - 0022-0248

VL - 209

SP - 556

EP - 560

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2-3

T2 - The 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques

Y2 - 28 July 1999 through 30 July 1999

ER -

Molecular beam epitaxy of MnSb/MnAs multilayers on GaAs

Abstract

ASJC Scopus subject areas

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