Molecular beam epitaxy of III-V diluted magnetic semiconductor (Ga,Mn)Sb

E. Abe; F. Matsukura; H. Yasuda; Y. Ohno; H. Ohno

doi:10.1016/S1386-9477(00)00100-4

Molecular beam epitaxy of III-V diluted magnetic semiconductor (Ga,Mn)Sb

E. Abe, F. Matsukura, H. Yasuda, Y. Ohno, H. Ohno

Research output: Contribution to journal › Conference article › peer-review

74 Citations (Scopus)

Abstract

(Ga,Mn)Sb with a few percent order of Mn was grown by molecular beam epitaxy. Two growth temperature ranges were studied; one is normal growth temperature of GaSb (approximately 560 °C) and the other is low temperature (250 °C or 300 °C). The properties of samples grown at these two growth temperatures were investigated by in situ reflection high-energy electron diffraction, atomic force microscopy, magnetization, and magnetotransport measurements. The results suggest the coexistence of two magnetic phases, (Ga,Mn)Sb and MnSb, for the samples grown at low temperature, whereas MnSb phase is dominant for the samples grown at high temperature.

Original language	English
Pages (from-to)	981-985
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	7
Issue number	3
DOIs	https://doi.org/10.1016/S1386-9477(00)00100-4
Publication status	Published - 2000 May
Event	MSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn Duration: 1999 Jul 12 → 1999 Jul 16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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title = "Molecular beam epitaxy of III-V diluted magnetic semiconductor (Ga,Mn)Sb",

abstract = "(Ga,Mn)Sb with a few percent order of Mn was grown by molecular beam epitaxy. Two growth temperature ranges were studied; one is normal growth temperature of GaSb (approximately 560 °C) and the other is low temperature (250 °C or 300 °C). The properties of samples grown at these two growth temperatures were investigated by in situ reflection high-energy electron diffraction, atomic force microscopy, magnetization, and magnetotransport measurements. The results suggest the coexistence of two magnetic phases, (Ga,Mn)Sb and MnSb, for the samples grown at low temperature, whereas MnSb phase is dominant for the samples grown at high temperature.",

author = "E. Abe and F. Matsukura and H. Yasuda and Y. Ohno and H. Ohno",

year = "2000",

month = may,

doi = "10.1016/S1386-9477(00)00100-4",

language = "English",

volume = "7",

pages = "981--985",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

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note = "MSS9: The 9th International Conference on Modulated Semiconductor Structures ; Conference date: 12-07-1999 Through 16-07-1999",

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TY - JOUR

T1 - Molecular beam epitaxy of III-V diluted magnetic semiconductor (Ga,Mn)Sb

AU - Abe, E.

AU - Matsukura, F.

AU - Yasuda, H.

AU - Ohno, Y.

AU - Ohno, H.

PY - 2000/5

Y1 - 2000/5

N2 - (Ga,Mn)Sb with a few percent order of Mn was grown by molecular beam epitaxy. Two growth temperature ranges were studied; one is normal growth temperature of GaSb (approximately 560 °C) and the other is low temperature (250 °C or 300 °C). The properties of samples grown at these two growth temperatures were investigated by in situ reflection high-energy electron diffraction, atomic force microscopy, magnetization, and magnetotransport measurements. The results suggest the coexistence of two magnetic phases, (Ga,Mn)Sb and MnSb, for the samples grown at low temperature, whereas MnSb phase is dominant for the samples grown at high temperature.

AB - (Ga,Mn)Sb with a few percent order of Mn was grown by molecular beam epitaxy. Two growth temperature ranges were studied; one is normal growth temperature of GaSb (approximately 560 °C) and the other is low temperature (250 °C or 300 °C). The properties of samples grown at these two growth temperatures were investigated by in situ reflection high-energy electron diffraction, atomic force microscopy, magnetization, and magnetotransport measurements. The results suggest the coexistence of two magnetic phases, (Ga,Mn)Sb and MnSb, for the samples grown at low temperature, whereas MnSb phase is dominant for the samples grown at high temperature.

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U2 - 10.1016/S1386-9477(00)00100-4

DO - 10.1016/S1386-9477(00)00100-4

M3 - Conference article

AN - SCOPUS:0033688505

VL - 7

SP - 981

EP - 985

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 3

T2 - MSS9: The 9th International Conference on Modulated Semiconductor Structures

Y2 - 12 July 1999 through 16 July 1999

ER -