Molecular beam epitaxy of III-V diluted magnetic semiconductor (Ga,Mn)Sb

E. Abe, F. Matsukura, H. Yasuda, Y. Ohno, H. Ohno

Research output: Contribution to journalConference articlepeer-review

74 Citations (Scopus)

Abstract

(Ga,Mn)Sb with a few percent order of Mn was grown by molecular beam epitaxy. Two growth temperature ranges were studied; one is normal growth temperature of GaSb (approximately 560 °C) and the other is low temperature (250 °C or 300 °C). The properties of samples grown at these two growth temperatures were investigated by in situ reflection high-energy electron diffraction, atomic force microscopy, magnetization, and magnetotransport measurements. The results suggest the coexistence of two magnetic phases, (Ga,Mn)Sb and MnSb, for the samples grown at low temperature, whereas MnSb phase is dominant for the samples grown at high temperature.

Original languageEnglish
Pages (from-to)981-985
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume7
Issue number3
DOIs
Publication statusPublished - 2000 May
EventMSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn
Duration: 1999 Jul 121999 Jul 16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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