TY - JOUR
T1 - Molecular beam epitaxy of GaSb with high concentration of Mn
AU - Matsukura, F.
AU - Abe, E.
AU - Ohno, Y.
AU - Ohno, H.
N1 - Funding Information:
This work was partly supported by the “Research for the Future” Program (#JSPS-RFTF97P00202), and #10450002 and #1175003 from the Japan Society for the Promotion of Science, and by a Grant-in-Aid for Science Research on Priority Area “Spin Controlled Semiconductor Nanostructures” (#09244103) from the Ministry of Education, Science, Sports, and Culture, Japan.
PY - 2000/6
Y1 - 2000/6
N2 - A study of molecular beam epitaxial growth and characterization of GaSb films with high concentration of Mn are studied. The result shows that Mn atoms in GaSb forms MnSb clusters at normal growth temperatures. Low growth temperatures suppress the formation of MnSb and tens of percent of Mn are incorporated in the host GaSb.
AB - A study of molecular beam epitaxial growth and characterization of GaSb films with high concentration of Mn are studied. The result shows that Mn atoms in GaSb forms MnSb clusters at normal growth temperatures. Low growth temperatures suppress the formation of MnSb and tens of percent of Mn are incorporated in the host GaSb.
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U2 - 10.1016/S0169-4332(00)00108-2
DO - 10.1016/S0169-4332(00)00108-2
M3 - Conference article
AN - SCOPUS:0034204701
SN - 0169-4332
VL - 159
SP - 265
EP - 269
JO - Applied Surface Science
JF - Applied Surface Science
T2 - 3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3)
Y2 - 25 October 1999 through 29 October 1999
ER -