Molecular beam epitaxy of GaSb with high concentration of Mn

F. Matsukura, E. Abe, Y. Ohno, H. Ohno

Research output: Contribution to journalConference articlepeer-review

20 Citations (Scopus)


A study of molecular beam epitaxial growth and characterization of GaSb films with high concentration of Mn are studied. The result shows that Mn atoms in GaSb forms MnSb clusters at normal growth temperatures. Low growth temperatures suppress the formation of MnSb and tens of percent of Mn are incorporated in the host GaSb.

Original languageEnglish
Pages (from-to)265-269
Number of pages5
JournalApplied Surface Science
Publication statusPublished - 2000 Jun
Event3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) - Karuizawa, Jpn
Duration: 1999 Oct 251999 Oct 29

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


Dive into the research topics of 'Molecular beam epitaxy of GaSb with high concentration of Mn'. Together they form a unique fingerprint.

Cite this