Molecular beam epitaxy of ErGaAs alloys on GaAs (0 0 1) substrates

Ri Guo Jin; Shuhei Yagi; Yasuto Hijikata; Shigeyuki Kuboya; Kentaro Onabe; Ryuji Katayama; Hiroyuki Yaguchi

doi:10.1016/j.jcrysgro.2012.12.043

Molecular beam epitaxy of ErGaAs alloys on GaAs (0 0 1) substrates

Ri Guo Jin, Shuhei Yagi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi

Materials Design Division

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We have successfully grown high crystalline quality ErGaAs alloy layers by solid-source molecular beam epitaxy. The X-ray diffraction (XRD) peak of ErGaAs alloys was found to shift systematically from the GaAs peak with increasing Er concentration up to 3.7%. XRD (1 1 5) reciprocal space map measurements revealed that the ErGaAs epitaxial layer is coherently grown on GaAs. We found from XRD results that ErGaAs alloys with low Er concentrations tend to crystallize in the zincblende structure.

Original language	English
Pages (from-to)	85-87
Number of pages	3
Journal	Journal of Crystal Growth
Volume	378
DOIs	https://doi.org/10.1016/j.jcrysgro.2012.12.043
Publication status	Published - 2013

Keywords

Alloys
Crystal structure
High resolution X-ray diffraction
Molecular beam epitaxy
Semiconducting gallium arsenide

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2012.12.043

Cite this

@article{d2f6830f4591449dbdb119289720796c,

title = "Molecular beam epitaxy of ErGaAs alloys on GaAs (0 0 1) substrates",

abstract = "We have successfully grown high crystalline quality ErGaAs alloy layers by solid-source molecular beam epitaxy. The X-ray diffraction (XRD) peak of ErGaAs alloys was found to shift systematically from the GaAs peak with increasing Er concentration up to 3.7%. XRD (1 1 5) reciprocal space map measurements revealed that the ErGaAs epitaxial layer is coherently grown on GaAs. We found from XRD results that ErGaAs alloys with low Er concentrations tend to crystallize in the zincblende structure.",

keywords = "Alloys, Crystal structure, High resolution X-ray diffraction, Molecular beam epitaxy, Semiconducting gallium arsenide",

author = "Jin, {Ri Guo} and Shuhei Yagi and Yasuto Hijikata and Shigeyuki Kuboya and Kentaro Onabe and Ryuji Katayama and Hiroyuki Yaguchi",

year = "2013",

doi = "10.1016/j.jcrysgro.2012.12.043",

language = "English",

volume = "378",

pages = "85--87",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Molecular beam epitaxy of ErGaAs alloys on GaAs (0 0 1) substrates

AU - Jin, Ri Guo

AU - Yagi, Shuhei

AU - Hijikata, Yasuto

AU - Kuboya, Shigeyuki

AU - Onabe, Kentaro

AU - Katayama, Ryuji

AU - Yaguchi, Hiroyuki

PY - 2013

Y1 - 2013

N2 - We have successfully grown high crystalline quality ErGaAs alloy layers by solid-source molecular beam epitaxy. The X-ray diffraction (XRD) peak of ErGaAs alloys was found to shift systematically from the GaAs peak with increasing Er concentration up to 3.7%. XRD (1 1 5) reciprocal space map measurements revealed that the ErGaAs epitaxial layer is coherently grown on GaAs. We found from XRD results that ErGaAs alloys with low Er concentrations tend to crystallize in the zincblende structure.

AB - We have successfully grown high crystalline quality ErGaAs alloy layers by solid-source molecular beam epitaxy. The X-ray diffraction (XRD) peak of ErGaAs alloys was found to shift systematically from the GaAs peak with increasing Er concentration up to 3.7%. XRD (1 1 5) reciprocal space map measurements revealed that the ErGaAs epitaxial layer is coherently grown on GaAs. We found from XRD results that ErGaAs alloys with low Er concentrations tend to crystallize in the zincblende structure.

KW - Alloys

KW - Crystal structure

KW - High resolution X-ray diffraction

KW - Molecular beam epitaxy

KW - Semiconducting gallium arsenide

UR - http://www.scopus.com/inward/record.url?scp=84885427998&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885427998&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2012.12.043

DO - 10.1016/j.jcrysgro.2012.12.043

M3 - Article

AN - SCOPUS:84885427998

SN - 0022-0248

VL - 378

SP - 85

EP - 87

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Molecular beam epitaxy of ErGaAs alloys on GaAs (0 0 1) substrates

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this