Molecular beam epitaxy of ErGaAs alloys on GaAs (0 0 1) substrates

Ri Guo Jin, Shuhei Yagi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We have successfully grown high crystalline quality ErGaAs alloy layers by solid-source molecular beam epitaxy. The X-ray diffraction (XRD) peak of ErGaAs alloys was found to shift systematically from the GaAs peak with increasing Er concentration up to 3.7%. XRD (1 1 5) reciprocal space map measurements revealed that the ErGaAs epitaxial layer is coherently grown on GaAs. We found from XRD results that ErGaAs alloys with low Er concentrations tend to crystallize in the zincblende structure.

Original languageEnglish
Pages (from-to)85-87
Number of pages3
JournalJournal of Crystal Growth
Volume378
DOIs
Publication statusPublished - 2013 Jan 1
Externally publishedYes

Keywords

  • Alloys
  • Crystal structure
  • High resolution X-ray diffraction
  • Molecular beam epitaxy
  • Semiconducting gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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