Molecular beam epitaxy of Al doped n-ZnSe

T. Takai; J. H. Chang; K. Godo; T. Hanada; T. Yao

doi:10.1002/1521-3951(200201)229:1<381::AID-PSSB381>3.0.CO;2-O

Molecular beam epitaxy of Al doped n-ZnSe

T. Takai, J. H. Chang, K. Godo, T. Hanada, T. Yao

Materials Design Division

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Molecular beam epitaxy of Al doped n-type ZnSe is studied. Growth conditions such as Al cell temperature and substrate temperature are systematically examined. The electrical, optical and structural properties of ZnSe: Al layers are investigated. ZnSe: Al layers show high electron concentration of 8.37 × 10¹⁸ cm^-3 with low electrical conductivity of 6.92 × 10^-3 Ω cm along with high crystallinity.

Original language	English
Pages (from-to)	381-384
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	229
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(200201)229:1<381::AID-PSSB381>3.0.CO;2-O
Publication status	Published - 2002 Aug 29

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-3951(200201)229:1<381::AID-PSSB381>3.0.CO;2-O

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abstract = "Molecular beam epitaxy of Al doped n-type ZnSe is studied. Growth conditions such as Al cell temperature and substrate temperature are systematically examined. The electrical, optical and structural properties of ZnSe: Al layers are investigated. ZnSe: Al layers show high electron concentration of 8.37 × 1018 cm-3 with low electrical conductivity of 6.92 × 10-3 Ω cm along with high crystallinity.",

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AU - Takai, T.

AU - Chang, J. H.

AU - Godo, K.

AU - Hanada, T.

AU - Yao, T.

PY - 2002/8/29

Y1 - 2002/8/29

N2 - Molecular beam epitaxy of Al doped n-type ZnSe is studied. Growth conditions such as Al cell temperature and substrate temperature are systematically examined. The electrical, optical and structural properties of ZnSe: Al layers are investigated. ZnSe: Al layers show high electron concentration of 8.37 × 1018 cm-3 with low electrical conductivity of 6.92 × 10-3 Ω cm along with high crystallinity.

AB - Molecular beam epitaxy of Al doped n-type ZnSe is studied. Growth conditions such as Al cell temperature and substrate temperature are systematically examined. The electrical, optical and structural properties of ZnSe: Al layers are investigated. ZnSe: Al layers show high electron concentration of 8.37 × 1018 cm-3 with low electrical conductivity of 6.92 × 10-3 Ω cm along with high crystallinity.

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Molecular beam epitaxy of Al doped n-ZnSe

Abstract

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