Molecular beam epitaxy of Al doped n-ZnSe

T. Takai, J. H. Chang, K. Godo, T. Hanada, T. Yao

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Molecular beam epitaxy of Al doped n-type ZnSe is studied. Growth conditions such as Al cell temperature and substrate temperature are systematically examined. The electrical, optical and structural properties of ZnSe: Al layers are investigated. ZnSe: Al layers show high electron concentration of 8.37 × 1018 cm-3 with low electrical conductivity of 6.92 × 10-3 Ω cm along with high crystallinity.

Original languageEnglish
Pages (from-to)381-384
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume229
Issue number1
DOIs
Publication statusPublished - 2002 Aug 29

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Molecular beam epitaxy of Al doped n-ZnSe'. Together they form a unique fingerprint.

Cite this