Abstract
Molecular beam epitaxy of Al doped n-type ZnSe is studied. Growth conditions such as Al cell temperature and substrate temperature are systematically examined. The electrical, optical and structural properties of ZnSe: Al layers are investigated. ZnSe: Al layers show high electron concentration of 8.37 × 1018 cm-3 with low electrical conductivity of 6.92 × 10-3 Ω cm along with high crystallinity.
Original language | English |
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Pages (from-to) | 381-384 |
Number of pages | 4 |
Journal | Physica Status Solidi (B) Basic Research |
Volume | 229 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2002 Aug 29 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics