Molecular beam epitaxy of Al doped n-type ZnSe is studied. Growth conditions such as Al cell temperature and substrate temperature are systematically examined. The electrical, optical and structural properties of ZnSe: Al layers are investigated. ZnSe: Al layers show high electron concentration of 8.37 × 1018 cm-3 with low electrical conductivity of 6.92 × 10-3 Ω cm along with high crystallinity.
|Number of pages||4|
|Journal||Physica Status Solidi (B) Basic Research|
|Publication status||Published - 2002 Aug 29|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics