Molecular beam epitaxy growth of the highly conductive oxide SrMoO3

Hiroshi Takatsu, Naoya Yamashina, Daisuke Shiga, Ryu Yukawa, Koji Horiba, Hiroshi Kumigashira, Takahito Terashima, Hiroshi Kageyama

Research output: Contribution to journalArticle

Abstract

SrMoO3 is a promising material for its excellent electrical conductivity, but growing high-quality thin films remains a challenge. Here we synthesized epitaxial films of SrMoO3 using molecular beam epitaxy (MBE) technique under low oxygen-flow rate. Introduction of SrTiO3 buffer layers of 4–8 unit cells between the film and the (0 0 1)-oriented SrTiO3 or KTaO3 substrate was crucial to remove impurities and/or roughness of the film surface. The obtained film shows improved electrical conductivities as compared with films obtained by other techniques. The high quality of the SrMoO3 film is also verified by angle resolved photoemission spectroscopy (ARPES) measurements showing a clear Fermi surface.

Original languageEnglish
Article number125685
JournalJournal of Crystal Growth
Volume543
DOIs
Publication statusPublished - 2020 Aug 1

Keywords

  • A1. Characterization
  • A3. Molecular beam epitaxy
  • B1. Perovskite oxides
  • B2. Conducting materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Takatsu, H., Yamashina, N., Shiga, D., Yukawa, R., Horiba, K., Kumigashira, H., Terashima, T., & Kageyama, H. (2020). Molecular beam epitaxy growth of the highly conductive oxide SrMoO3 Journal of Crystal Growth, 543, [125685]. https://doi.org/10.1016/j.jcrysgro.2020.125685