Molecular beam epitaxy growth of antiferromagnetic Kagome metal FeSn

Hisashi Inoue, Minyong Han, Linda Ye, Takehito Suzuki, Joseph G. Checkelsky

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

FeSn is a room-temperature antiferromagnet expected to host Dirac fermions in its electronic structure. The interplay of the magnetic degree of freedom and the Dirac fermions makes FeSn an attractive platform for spintronics and electronic devices. While stabilization of thin film FeSn is needed for the development of such devices, there exist no previous reports of epitaxial growth of single crystalline FeSn. Here, we report the realization of epitaxial thin films of FeSn (001) grown by molecular beam epitaxy on single crystal SrTiO3 (111) substrates. By combining X-ray diffraction, electrical transport, and torque magnetometry measurements, we demonstrate the high quality of these films with the residual resistivity ratio ρ xx (300 K) / ρ xx (2 K) = 24 and antiferromagnetic ordering at T N = 353 K. These developments open a pathway to manipulate the Dirac fermions in FeSn by both magnetic interactions and the electronic field effect for use in antiferromagnetic spintronics devices.

Original languageEnglish
Article number072403
JournalApplied Physics Letters
Volume115
Issue number7
DOIs
Publication statusPublished - 2019 Aug 12

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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