TY - JOUR
T1 - Molecular beam epitaxy growth of antiferromagnetic Kagome metal FeSn
AU - Inoue, Hisashi
AU - Han, Minyong
AU - Ye, Linda
AU - Suzuki, Takehito
AU - Checkelsky, Joseph G.
N1 - Funding Information:
We are grateful to R. Comin, M. Kang, J. van den Brink, S. Fang, and M. P. Ghimire for fruitful discussions. This research was funded, in part, by the Gordon and Betty Moore Foundation EPiQS Initiative, Grant No. GBMF3848 to J.G.C. and ARO Grant No. W911NF-16-1-0034. L.Y. acknowledges support by the STC Center for Integrated Quantum Materials, NSF Grant No. DMR-1231319, and the Tsinghua Education Foundation. The authors acknowledge characterization facility support provided by the Materials Research Laboratory at the Massachusetts Institute of Technology, as well as fabrication facility support by the Microsystems Technology Laboratories at the Massachusetts Institute of Technology.
Publisher Copyright:
© 2019 Author(s).
PY - 2019/8/12
Y1 - 2019/8/12
N2 - FeSn is a room-temperature antiferromagnet expected to host Dirac fermions in its electronic structure. The interplay of the magnetic degree of freedom and the Dirac fermions makes FeSn an attractive platform for spintronics and electronic devices. While stabilization of thin film FeSn is needed for the development of such devices, there exist no previous reports of epitaxial growth of single crystalline FeSn. Here, we report the realization of epitaxial thin films of FeSn (001) grown by molecular beam epitaxy on single crystal SrTiO3 (111) substrates. By combining X-ray diffraction, electrical transport, and torque magnetometry measurements, we demonstrate the high quality of these films with the residual resistivity ratio ρ xx (300 K) / ρ xx (2 K) = 24 and antiferromagnetic ordering at T N = 353 K. These developments open a pathway to manipulate the Dirac fermions in FeSn by both magnetic interactions and the electronic field effect for use in antiferromagnetic spintronics devices.
AB - FeSn is a room-temperature antiferromagnet expected to host Dirac fermions in its electronic structure. The interplay of the magnetic degree of freedom and the Dirac fermions makes FeSn an attractive platform for spintronics and electronic devices. While stabilization of thin film FeSn is needed for the development of such devices, there exist no previous reports of epitaxial growth of single crystalline FeSn. Here, we report the realization of epitaxial thin films of FeSn (001) grown by molecular beam epitaxy on single crystal SrTiO3 (111) substrates. By combining X-ray diffraction, electrical transport, and torque magnetometry measurements, we demonstrate the high quality of these films with the residual resistivity ratio ρ xx (300 K) / ρ xx (2 K) = 24 and antiferromagnetic ordering at T N = 353 K. These developments open a pathway to manipulate the Dirac fermions in FeSn by both magnetic interactions and the electronic field effect for use in antiferromagnetic spintronics devices.
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U2 - 10.1063/1.5111792
DO - 10.1063/1.5111792
M3 - Article
AN - SCOPUS:85070713127
VL - 115
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 7
M1 - 072403
ER -