Molecular beam epitaxy growth and characterization of self-assembled InAs quantum dots on (1 0 0) InAlAs/InP substrates

B. H. Koo, Y. G. Park, H. Makino, J. H. Chang, T. Hanada, D. Shindo, T. Yao

Research output: Contribution to journalArticlepeer-review

Abstract

Self-assembled InAs quantum dots (QDs) on In0.52Al0.48As layer lattice matched to (1 0 0) InP substrates have been grown by molecular beam epitaxy (MBE) and evaluated by transmission electron microscopy (TEM) and photoluminescence (PL). TEM observations indicate that defect-free InAs QDs can be grown to obtain emissions over the technologically important 1.3-1.55 μm region. The PL peak positions for the QDs shift to low energy as the InAs coverage increases, corresponding to increase in QD size. The room temperature PL peak at 1.58 μm was observed from defect-free InAs QDs with average dot height of 3.6 nm.

Original languageEnglish
Pages (from-to)226-230
Number of pages5
JournalApplied Surface Science
Volume190
Issue number1-4
DOIs
Publication statusPublished - 2002 May 8

Keywords

  • InAs quantum dots
  • MBE
  • PL
  • TEM

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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