Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Owing to the nonmagnetic nature of III-V compounds magnetic cooperative phenomena were not a part of the rich soil of III-V heterostructures in the past. The synthesis of magnetic III-V semiconductors and subsequent discovery of carrier-induced ferromagnetism in them now allows us to combine ferromagnetism with the properties of III-V heterostructures. Here, I describe molecular beam epitaxy of ferromagnetic III/V's, a mean-field model for the carrier-induced ferromagnetism in them, and isothermal and reversible electric field control of carrier-induced ferromagnetism in a ferromagnetic semiconductor (In,Mn)As.

Original languageEnglish
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages9-10
Number of pages2
ISBN (Electronic)0780375815, 9780780375819
DOIs
Publication statusPublished - 2002
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: 2002 Sep 152002 Sep 20

Publication series

NameMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Other

Other12th International Conference on Molecular Beam Epitaxy, MBE 2002
CountryUnited States
CitySan Francisco
Period02/9/1502/9/20

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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