Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors

H. Ohno

doi:10.1109/MBE.2002.1037734

Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors

H. Ohno

Leadership

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Owing to the nonmagnetic nature of III-V compounds magnetic cooperative phenomena were not a part of the rich soil of III-V heterostructures in the past. The synthesis of magnetic III-V semiconductors and subsequent discovery of carrier-induced ferromagnetism in them now allows us to combine ferromagnetism with the properties of III-V heterostructures. Here, I describe molecular beam epitaxy of ferromagnetic III/V's, a mean-field model for the carrier-induced ferromagnetism in them, and isothermal and reversible electric field control of carrier-induced ferromagnetism in a ferromagnetic semiconductor (In,Mn)As.

Original language	English
Title of host publication	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	9-10
Number of pages	2
ISBN (Electronic)	0780375815, 9780780375819
DOIs	https://doi.org/10.1109/MBE.2002.1037734
Publication status	Published - 2002
Event	12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States Duration: 2002 Sep 15 → 2002 Sep 20

Publication series

Name	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Other

Other	12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country	United States
City	San Francisco
Period	02/9/15 → 02/9/20

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

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Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors. / Ohno, H.

MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. p. 9-10 1037734 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ohno, H 2002, Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors. in MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy., 1037734, MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy, Institute of Electrical and Electronics Engineers Inc., pp. 9-10, 12th International Conference on Molecular Beam Epitaxy, MBE 2002, San Francisco, United States, 02/9/15. https://doi.org/10.1109/MBE.2002.1037734

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title = "Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors",

abstract = "Owing to the nonmagnetic nature of III-V compounds magnetic cooperative phenomena were not a part of the rich soil of III-V heterostructures in the past. The synthesis of magnetic III-V semiconductors and subsequent discovery of carrier-induced ferromagnetism in them now allows us to combine ferromagnetism with the properties of III-V heterostructures. Here, I describe molecular beam epitaxy of ferromagnetic III/V's, a mean-field model for the carrier-induced ferromagnetism in them, and isothermal and reversible electric field control of carrier-induced ferromagnetism in a ferromagnetic semiconductor (In,Mn)As.",

author = "H. Ohno",

note = "Funding Information: I am grateful for fruitful collaborations and discussions with a number of colleagues; among them are F. Matsukura, Y. Ohno, and T. Dietl. This work was partly supported by a Grant-in-Aid (No. 12305001) and the Research for the Future Program both from JSPS, and partly by the IT-Program of Research Revolution 2002 (RR2002) from MEXT. Publisher Copyright: {\textcopyright} 2002 IEEE.; 12th International Conference on Molecular Beam Epitaxy, MBE 2002 ; Conference date: 15-09-2002 Through 20-09-2002",

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doi = "10.1109/MBE.2002.1037734",

language = "English",

series = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",

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N1 - Funding Information: I am grateful for fruitful collaborations and discussions with a number of colleagues; among them are F. Matsukura, Y. Ohno, and T. Dietl. This work was partly supported by a Grant-in-Aid (No. 12305001) and the Research for the Future Program both from JSPS, and partly by the IT-Program of Research Revolution 2002 (RR2002) from MEXT. Publisher Copyright: © 2002 IEEE.

PY - 2002

Y1 - 2002

N2 - Owing to the nonmagnetic nature of III-V compounds magnetic cooperative phenomena were not a part of the rich soil of III-V heterostructures in the past. The synthesis of magnetic III-V semiconductors and subsequent discovery of carrier-induced ferromagnetism in them now allows us to combine ferromagnetism with the properties of III-V heterostructures. Here, I describe molecular beam epitaxy of ferromagnetic III/V's, a mean-field model for the carrier-induced ferromagnetism in them, and isothermal and reversible electric field control of carrier-induced ferromagnetism in a ferromagnetic semiconductor (In,Mn)As.

AB - Owing to the nonmagnetic nature of III-V compounds magnetic cooperative phenomena were not a part of the rich soil of III-V heterostructures in the past. The synthesis of magnetic III-V semiconductors and subsequent discovery of carrier-induced ferromagnetism in them now allows us to combine ferromagnetism with the properties of III-V heterostructures. Here, I describe molecular beam epitaxy of ferromagnetic III/V's, a mean-field model for the carrier-induced ferromagnetism in them, and isothermal and reversible electric field control of carrier-induced ferromagnetism in a ferromagnetic semiconductor (In,Mn)As.

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BT - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 12th International Conference on Molecular Beam Epitaxy, MBE 2002

Y2 - 15 September 2002 through 20 September 2002

ER -

Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors

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