TY - GEN
T1 - Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors
AU - Ohno, H.
N1 - Funding Information:
I am grateful for fruitful collaborations and discussions with a number of colleagues; among them are F. Matsukura, Y. Ohno, and T. Dietl. This work was partly supported by a Grant-in-Aid (No. 12305001) and the Research for the Future Program both from JSPS, and partly by the IT-Program of Research Revolution 2002 (RR2002) from MEXT.
Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - Owing to the nonmagnetic nature of III-V compounds magnetic cooperative phenomena were not a part of the rich soil of III-V heterostructures in the past. The synthesis of magnetic III-V semiconductors and subsequent discovery of carrier-induced ferromagnetism in them now allows us to combine ferromagnetism with the properties of III-V heterostructures. Here, I describe molecular beam epitaxy of ferromagnetic III/V's, a mean-field model for the carrier-induced ferromagnetism in them, and isothermal and reversible electric field control of carrier-induced ferromagnetism in a ferromagnetic semiconductor (In,Mn)As.
AB - Owing to the nonmagnetic nature of III-V compounds magnetic cooperative phenomena were not a part of the rich soil of III-V heterostructures in the past. The synthesis of magnetic III-V semiconductors and subsequent discovery of carrier-induced ferromagnetism in them now allows us to combine ferromagnetism with the properties of III-V heterostructures. Here, I describe molecular beam epitaxy of ferromagnetic III/V's, a mean-field model for the carrier-induced ferromagnetism in them, and isothermal and reversible electric field control of carrier-induced ferromagnetism in a ferromagnetic semiconductor (In,Mn)As.
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U2 - 10.1109/MBE.2002.1037734
DO - 10.1109/MBE.2002.1037734
M3 - Conference contribution
AN - SCOPUS:84968538243
T3 - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
SP - 9
EP - 10
BT - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 12th International Conference on Molecular Beam Epitaxy, MBE 2002
Y2 - 15 September 2002 through 20 September 2002
ER -