InAs quantum dots (QDs) on In0.52Al0.48As layer lattice matched to (100) InP substrates were grown by solid-source molecular beam epitaxy. We performed a study on the structural and optical properties of InAs QDs with 0.8 eV (1.55 μm) emission by using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. The TEM image showed clear existence of the QDs. The PL showed ∼0.8 eV (∼1.55 μm) emission from dislocation-free InAs QDs with height of ∼3.6 nm and base width of ∼20 nm. Activation energies obtained from temperature dependence of the integrated PL intensity were also similar to the reported values, confirming the formation of InAs QDs.
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2003 Feb 1|
|Event||Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of|
Duration: 2002 Aug 20 → 2002 Aug 23
- InAs quantum dots
ASJC Scopus subject areas
- Physics and Astronomy(all)