Molecular beam epitaxial growth of InAs quantum dots on (100) InAIAs/InP emitting at near infrared wavelength

B. H. Koo, J. H. Chang, H. Making, T. Hanada, T. Yao, Y. G. Park, D. Shindo, J. H. Lee, C. G. Lee, Y. D. Kim

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

InAs quantum dots (QDs) on In0.52Al0.48As layer lattice matched to (100) InP substrates were grown by solid-source molecular beam epitaxy. We performed a study on the structural and optical properties of InAs QDs with 0.8 eV (1.55 μm) emission by using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. The TEM image showed clear existence of the QDs. The PL showed ∼0.8 eV (∼1.55 μm) emission from dislocation-free InAs QDs with height of ∼3.6 nm and base width of ∼20 nm. Activation energies obtained from temperature dependence of the integrated PL intensity were also similar to the reported values, confirming the formation of InAs QDs.

Original languageEnglish
Pages (from-to)S246-S249
JournalJournal of the Korean Physical Society
Volume42
Issue numberSPEC.
Publication statusPublished - 2003 Feb 1
EventProceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of
Duration: 2002 Aug 202002 Aug 23

Keywords

  • InAs quantum dots
  • MBE
  • PL
  • TEM

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Koo, B. H., Chang, J. H., Making, H., Hanada, T., Yao, T., Park, Y. G., Shindo, D., Lee, J. H., Lee, C. G., & Kim, Y. D. (2003). Molecular beam epitaxial growth of InAs quantum dots on (100) InAIAs/InP emitting at near infrared wavelength. Journal of the Korean Physical Society, 42(SPEC.), S246-S249.