MOLECULAR BEAM EPITAXIAL GROWTH OF (GaAs)//m/(InAs)//n SUPERLATTICE SEMICONDUCTORS.

R. Katsumi, H. Ohno, T. Takama, H. Hasegawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Molecular beam epitaxial growth of (GaAs)//m/(InAs)//n superlattice semiconductors is reported. The Reflection Electron Diffraction (RED) is used to monitor the growth process. The RED intensity oscillation is shown to correspond to the monolayer formation even for GaAs-InAs system where 7% lattice mismatch is present. The maximum thickness for maintaining two dimensional growth of InAs on GaAs substrate is estimated to be approximately 5 monolayers (15 Angstrom) from RED. The growth of superlattice semiconductors is confirmed by X-ray diffraction.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
Pages391-396
Number of pages6
Edition79
Publication statusPublished - 1986 Dec 1
Externally publishedYes

Publication series

NameInstitute of Physics Conference Series
Number79
ISSN (Print)0373-0751

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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