Abstract
Polycrystalline silicon were grown at high temperature in a gas-source molecular beam epitaxy (MBE) and then exposed to cavitation impacts from the backside at different scanning times to introduce compressive stress. The micro-Raman spectroscopy showed that regions of greater structural change due to cavitation impacts experience higher full width at half maximum (FWHM) and that stress was a function of number of scans. AFM was used to analyze the surface morphology of the specimen in the as-grown condition and after exposed to cavitation impacts. The structural features were characterized by X-ray diffraction (XRD) and high resolution transmission electron microscope (HRTEM). HRTEM observations showed that nanoparticles size of grains at the growth/death zone of interface. The dislocations types, twinnings and defects caused by cavitation impacts are discussed.
Original language | English |
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Article number | 150 |
Pages (from-to) | 750-754 |
Number of pages | 5 |
Journal | Journal of Physics: Conference Series |
Volume | 61 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2007 Apr 1 |
ASJC Scopus subject areas
- Physics and Astronomy(all)