The multiple quasiparticle tunnelling branches with large hysteresis were measured on the mesas of Si+ implanted Bi2Sr 2CaCu2O8+x single crystals. For given Si + dosage the tunnelling critical current Ic decreased for junctions located closer to the mesa surface; meanwhile the voltage interval between the neighboring quasiparticle branches decreased with increasing the Si+ dosage.
ASJC Scopus subject areas
- Statistical and Nonlinear Physics
- Condensed Matter Physics