A systematic characterization of fluctuation in submicron Hall devices based on GaAs/AlGaAs two dimensional electron gas heterostructures at temperature between 1.5 to 60 k was presented. A variety of noise spectra, from 1/f to Lorentzian, were obtained by gating the hall devices. The detailed study of the noise shows that the large gate voltage dependence cannot be explained by change in the electron density or mobility. The data suggest that the thermally activated switching processes related to remote impurities were responsible for the observed noise behavior.
ASJC Scopus subject areas
- Physics and Astronomy(all)