Modulation effects of photocarriers on the terahertz plasma-wave resonance in high-electron-mobility transistors under interband photoexcitation

Mitsuhiro Hanabe, Taiichi Otsuji, Takuma Ishibashi, Tomohiro Uno, Victor Ryzhii

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Two-dimensional (2-D) electron plasma in a submicron channel of a high-electron mobility transistor (HEMT) is excited by interband photoexcitation, resulting in performing the photomixing function. The injected photoelectrons modulate the total 2-D electron density, affecting the plasma resonant properties. The modulation depth of the density of 2-D electrons by the photoelectrons deeply relates to the resonant intensity and fr. This effect was modeled analytically in the 2-D plasma hydrodynamic equation. In order to validate the analytical calculation, the plasma-wave resonance was experimentally observed for a 0.15-μm gate-length InGaP/InGaAs/GaAs pseudomorphic HEMT in the terahertz range. At the modulation depth of 30%, the resonance was clearly observed with a double peak (the peak at 1.9/5.8 THz corresponding to the fundamental/third harmonic resonance). The resonant frequencies slightly shifted downward and the intensity attenuated with decreasing the modulation depth. Observed resonant frequencies support the analytical calculation.

Original languageEnglish
Pages (from-to)3842-3847
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number6 A
DOIs
Publication statusPublished - 2005 Jun 1
Externally publishedYes

Keywords

  • High-electron-mobility transistor (HEMT)
  • Interband photoexcitation
  • Photocarriers
  • Plasma-wave resonance
  • Terahertz

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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