Modulation-Doped Field-Effect Transistors with an 8-nm InGaAs/InAs/InGaAs Quantum Well

D. Xu; J. Osaka; Y. Umeda; T. Suemitsu; Y. Yamane; Y. Ishii

doi:10.1109/55.748904

Modulation-Doped Field-Effect Transistors with an 8-nm InGaAs/InAs/InGaAs Quantum Well

D. Xu, J. Osaka, Y. Umeda, T. Suemitsu, Y. Yamane, Y. Ishii

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

We show that the channel thickness of modulation-doped field-effect transistors (MODFET's) based on an InAlAs/InGaAs heterojunction can be reduced from 15 to 8 nm without any degradation of the main DC and RF figures of merits. Furthermore, short-channel effects, which are pronounced in sub-0.1-μm devices, can be effectively suppressed by this thin-channel design. The retainment of high performance and alleviation of short-channel effects are attributed to the excellent two-dimensional electron gas (2-DEG) confinement by the inserted InAs layer. The successful channel thinning opens up the possibility of employing high-quality thin-channel structures for MODFET's with gate lengths below 0.05 μm.

Original language	English
Pages (from-to)	109-112
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	20
Issue number	3
DOIs	https://doi.org/10.1109/55.748904
Publication status	Published - 1999 Mar 1
Externally published	Yes

Keywords

Epitaxial growth
High-speed circuits/devices
MODFET's
Semiconductor device fabrication
Semiconductor growth
Semiconductor heterojunction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Xu, D., Osaka, J., Umeda, Y., Suemitsu, T., Yamane, Y., & Ishii, Y. (1999). Modulation-Doped Field-Effect Transistors with an 8-nm InGaAs/InAs/InGaAs Quantum Well. IEEE Electron Device Letters, 20(3), 109-112. https://doi.org/10.1109/55.748904

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abstract = "We show that the channel thickness of modulation-doped field-effect transistors (MODFET's) based on an InAlAs/InGaAs heterojunction can be reduced from 15 to 8 nm without any degradation of the main DC and RF figures of merits. Furthermore, short-channel effects, which are pronounced in sub-0.1-μm devices, can be effectively suppressed by this thin-channel design. The retainment of high performance and alleviation of short-channel effects are attributed to the excellent two-dimensional electron gas (2-DEG) confinement by the inserted InAs layer. The successful channel thinning opens up the possibility of employing high-quality thin-channel structures for MODFET's with gate lengths below 0.05 μm.",

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AU - Xu, D.

AU - Osaka, J.

AU - Umeda, Y.

AU - Suemitsu, T.

AU - Yamane, Y.

AU - Ishii, Y.

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AB - We show that the channel thickness of modulation-doped field-effect transistors (MODFET's) based on an InAlAs/InGaAs heterojunction can be reduced from 15 to 8 nm without any degradation of the main DC and RF figures of merits. Furthermore, short-channel effects, which are pronounced in sub-0.1-μm devices, can be effectively suppressed by this thin-channel design. The retainment of high performance and alleviation of short-channel effects are attributed to the excellent two-dimensional electron gas (2-DEG) confinement by the inserted InAs layer. The successful channel thinning opens up the possibility of employing high-quality thin-channel structures for MODFET's with gate lengths below 0.05 μm.

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