Abstract
We show that the channel thickness of modulation-doped field-effect transistors (MODFET's) based on an InAlAs/InGaAs heterojunction can be reduced from 15 to 8 nm without any degradation of the main DC and RF figures of merits. Furthermore, short-channel effects, which are pronounced in sub-0.1-μm devices, can be effectively suppressed by this thin-channel design. The retainment of high performance and alleviation of short-channel effects are attributed to the excellent two-dimensional electron gas (2-DEG) confinement by the inserted InAs layer. The successful channel thinning opens up the possibility of employing high-quality thin-channel structures for MODFET's with gate lengths below 0.05 μm.
Original language | English |
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Pages (from-to) | 109-112 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 20 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1999 Mar |
Externally published | Yes |
Keywords
- Epitaxial growth
- High-speed circuits/devices
- MODFET's
- Semiconductor device fabrication
- Semiconductor growth
- Semiconductor heterojunction
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering