Modified triode plasma configuration allowing precise control of ion-energy for preparing high mobility a-Si:H

G. Ganguly, T. Ikeda, I. Sakata, A. Matsuda, K. Kato, S. Iizuka, N. Sato

Research output: Contribution to journalConference article

17 Citations (Scopus)

Abstract

We have previously shown that the carrier drift mobility in amorphous silicon can be enhanced by optimizing the ion-bombardment energy during growth on conducting substrates. However, there exists a lack of reproducibility of samples exhibiting high mobility which we attribute to the rf field induced fluctuation of the plasma potential in a conventional (Te ≈ 2eV) silane plasma. Here we introduce an enclosed plasma configuration that allows us to confine the effect of the rf field and therefore obtain a low-electron-temperature (Te ≈ 0.1eV) silane plasma as determined from Langmuir probe measurements. The measured ion-energy distributions correlate with those for electrons and the mean ion-energy can be controlled by biasing the substrate which allows us to reproducibly fabricate high drift mobility amorphous silicon.

Original languageEnglish
Pages (from-to)347-352
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume420
DOIs
Publication statusPublished - 1996 Jan 1
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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