Abstract
We have previously shown that the carrier drift mobility in amorphous silicon can be enhanced by optimizing the ion-bombardment energy during growth on conducting substrates. However, there exists a lack of reproducibility of samples exhibiting high mobility which we attribute to the rf field induced fluctuation of the plasma potential in a conventional (Te ≈ 2eV) silane plasma. Here we introduce an enclosed plasma configuration that allows us to confine the effect of the rf field and therefore obtain a low-electron-temperature (Te ≈ 0.1eV) silane plasma as determined from Langmuir probe measurements. The measured ion-energy distributions correlate with those for electrons and the mean ion-energy can be controlled by biasing the substrate which allows us to reproducibly fabricate high drift mobility amorphous silicon.
Original language | English |
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Pages (from-to) | 347-352 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 420 |
DOIs | |
Publication status | Published - 1996 Jan 1 |
Event | Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 1996 Apr 8 → 1996 Apr 12 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering