Modified oxygen vacancy induced fermi level pinning model extendable to P-metal pinning

Yasushi Akasaka, Genji Nakamura, Kenji Shiraishi, Naoto Umezawa, Kikuo Yamabe, Osamu Ogawa, Myoungbum Lee, Toshio Amiaka, Tooru Kasuya, Heiji Watanabe, Toyohiro Chikyow, Fumio Ootsuka, Yasuo Nara, Kunio Nakamura

Research output: Contribution to journalArticlepeer-review

121 Citations (Scopus)


Typical p-metals show similar effective work functions close to p + polycrystalline silicon (poly-Si) pinning position irrespective of materials after high-temperature process. We found that this phenomenon can be explained by the modified Vo model taking into account the effect of Si substrate. Oxygen absorption by Si substrate and subsequent electron transfer to metal electrode clearly explain the p-metal Fermi level pinning as well as p+ poly-Si pinning. In addition, unsuppressed Fermi level pinning by insertion of barrier layer at p+ poly-Si/barrier layer/high-k gate stack, which is one of the open issues concerning P+ poly-Si pinning, has the same overall reaction scheme. The modified model also consistently explains this phenomenon.

Original languageEnglish
Pages (from-to)L1289-L1292
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number46-50
Publication statusPublished - 2006 Dec
Externally publishedYes


  • Fermi level pinning
  • High-k dielectrics
  • Metal gate
  • Oxygen vacancy
  • Work function

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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