Modification of the electric conduction at the pentacene SiO2 interface by surface termination of SiO2

Iwao Yagi, Kazuhito Tsukagoshi, Yoshinobu Aoyagi

Research output: Contribution to journalArticle

133 Citations (Scopus)

Abstract

A surface treatment method has been developed for the SiO2 Si substrate to control the electrical properties of pentacene thin-film transistors (TFTs). The surface treatment is performed by spin-coating 1,1,1,3,3,3-hexamethyldisilazane liquid, resulting in a drastic improvement of the off current although the surface treatment never shows a pronounced morphological change in the pentacene channel in comparison with the one on the nontreated substrate. The off current improvement directly enhances the transistor performance especially in the TFTs with a few monolayers channel thickness. The off current suppression could be caused by the reduction of the interfacial floating charge trapped at the pentacene SiO2 interface.

Original languageEnglish
Article number103502
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number10
DOIs
Publication statusPublished - 2005 Mar 7
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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