TY - JOUR
T1 - Modification of the electric conduction at the pentacene SiO2 interface by surface termination of SiO2
AU - Yagi, Iwao
AU - Tsukagoshi, Kazuhito
AU - Aoyagi, Yoshinobu
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2005/3/7
Y1 - 2005/3/7
N2 - A surface treatment method has been developed for the SiO2 Si substrate to control the electrical properties of pentacene thin-film transistors (TFTs). The surface treatment is performed by spin-coating 1,1,1,3,3,3-hexamethyldisilazane liquid, resulting in a drastic improvement of the off current although the surface treatment never shows a pronounced morphological change in the pentacene channel in comparison with the one on the nontreated substrate. The off current improvement directly enhances the transistor performance especially in the TFTs with a few monolayers channel thickness. The off current suppression could be caused by the reduction of the interfacial floating charge trapped at the pentacene SiO2 interface.
AB - A surface treatment method has been developed for the SiO2 Si substrate to control the electrical properties of pentacene thin-film transistors (TFTs). The surface treatment is performed by spin-coating 1,1,1,3,3,3-hexamethyldisilazane liquid, resulting in a drastic improvement of the off current although the surface treatment never shows a pronounced morphological change in the pentacene channel in comparison with the one on the nontreated substrate. The off current improvement directly enhances the transistor performance especially in the TFTs with a few monolayers channel thickness. The off current suppression could be caused by the reduction of the interfacial floating charge trapped at the pentacene SiO2 interface.
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U2 - 10.1063/1.1875749
DO - 10.1063/1.1875749
M3 - Article
AN - SCOPUS:17944377910
VL - 86
SP - 1
EP - 3
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 10
M1 - 103502
ER -