Modification of silicon surface using atomic force microscope with conducting probe

Masatoshi Yasutake, Yasunori Ejiri, Takeo Hattori

    Research output: Contribution to journalArticle

    77 Citations (Scopus)

    Abstract

    It is demonstrated that nearly atomically flat Si(100) surfaces passivated with native oxides can be modified by applying a negative potential to the conducting probe of an atomic force microscope (AFM) with respect to the silicon substrate. It was verified from the detection of OKLL Auger electrons and SiLVV Auger electrons excited by the electron beam that silicon surfaces are modified by the oxidation of silicon. This oxidation is enhanced by an electric field.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume32
    Issue number7 B
    Publication statusPublished - 1993

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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