It is demonstrated that nearly atomically flat Si(100) surfaces passivated with native oxides can be modified by applying a negative potential to the conducting probe of an atomic force microscope (AFM) with respect to the silicon substrate. It was verified from the detection of OKLL Auger electrons and SiLVV Auger electrons excited by the electron beam that silicon surfaces are modified by the oxidation of silicon. This oxidation is enhanced by an electric field.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||7 B|
|Publication status||Published - 1993|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)