Modification of semiconductor-dielectric interface in organic light-emitting field-effect transistors

Yan Wang, Ryotaro Kumashiro, Naoya Komatsu, Katsumi Tanigaki

Research output: Contribution to journalConference articlepeer-review

Abstract

In this work, ambipolar rubrene single crystal field-effect transistors (FETs) with PMMA modification layer and Au/Ca as electrodes were fabricated. The electron mobility was studied in these devices. PMMA modification layer on the surface of SiO2 is necessary for electron behavior. We found that the device with PMMA modified insulator and Au-Ca asymmetric metals possessed hole mobility and electron mobility of 1.27 and 0.017 cm-2/V s, respectively. Furthermore, the shift of light emitting with applied gate voltage was observed in this device.

Original languageEnglish
Pages (from-to)51-56
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume1154
DOIs
Publication statusPublished - 2009 Jan 1
Event2009 MRS Spring Meeting: MRS Symposium B on Concepts in Molecular and Organic Electronics - San Francisco, CA, United States
Duration: 2009 Apr 132009 Apr 17

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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