Modification of reflection high-energy electron diffraction system for in situ monitoring of oxide epitaxy at high oxygen pressure

K. Tsubouchi, I. Ohkubo, T. Harada, H. Kumigashira, Y. Matsumoto, T. Ohnishi, M. Lippmaa, H. Koinuma, M. Oshima

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We have developed a modified single-stage differentially pumped RHEED system for in situ monitoring of oxide epitaxial growth at high oxygen pressure. This modification enables us to operate the RHEED system up to oxygen pressure of 100 mTorr. RHEED intensity oscillations indicative of the layer-by-layer growth were clearly observed during LaNiO3 epitaxial growth at 30 mTorr of pure oxygen ambient. LaNiO3 epitaxial thin films showed both atomically flat surfaces and low resistivity, suggesting that the operative oxygen pressure was high enough to epitaxially grow oxide films under optimum conditions.

Original languageEnglish
Pages (from-to)16-18
Number of pages3
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume148
Issue number1-3
DOIs
Publication statusPublished - 2008 Feb 25
Externally publishedYes

Keywords

  • Epitaxy of thin films
  • Oxides
  • Reflection high-energy electron diffraction (RHEED) techniques

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Modification of reflection high-energy electron diffraction system for in situ monitoring of oxide epitaxy at high oxygen pressure'. Together they form a unique fingerprint.

Cite this