Modification of reflection high-energy electron diffraction system for in situ monitoring of oxide epitaxy at high oxygen pressure

K. Tsubouchi; I. Ohkubo; T. Harada; H. Kumigashira; Y. Matsumoto; T. Ohnishi; M. Lippmaa; H. Koinuma; M. Oshima

doi:10.1016/j.mseb.2007.09.005

Modification of reflection high-energy electron diffraction system for in situ monitoring of oxide epitaxy at high oxygen pressure

K. Tsubouchi, I. Ohkubo, T. Harada, H. Kumigashira, Y. Matsumoto, T. Ohnishi, M. Lippmaa, H. Koinuma, M. Oshima

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have developed a modified single-stage differentially pumped RHEED system for in situ monitoring of oxide epitaxial growth at high oxygen pressure. This modification enables us to operate the RHEED system up to oxygen pressure of 100 mTorr. RHEED intensity oscillations indicative of the layer-by-layer growth were clearly observed during LaNiO₃ epitaxial growth at 30 mTorr of pure oxygen ambient. LaNiO₃ epitaxial thin films showed both atomically flat surfaces and low resistivity, suggesting that the operative oxygen pressure was high enough to epitaxially grow oxide films under optimum conditions.

Original language	English
Pages (from-to)	16-18
Number of pages	3
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	148
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2007.09.005
Publication status	Published - 2008 Feb 25
Externally published	Yes

Keywords

Epitaxy of thin films
Oxides
Reflection high-energy electron diffraction (RHEED) techniques

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mseb.2007.09.005

Cite this

Tsubouchi, K., Ohkubo, I., Harada, T., Kumigashira, H., Matsumoto, Y., Ohnishi, T., Lippmaa, M., Koinuma, H., & Oshima, M. (2008). Modification of reflection high-energy electron diffraction system for in situ monitoring of oxide epitaxy at high oxygen pressure. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 148(1-3), 16-18. https://doi.org/10.1016/j.mseb.2007.09.005

Modification of reflection high-energy electron diffraction system for in situ monitoring of oxide epitaxy at high oxygen pressure. / Tsubouchi, K.; Ohkubo, I.; Harada, T. et al.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 148, No. 1-3, 25.02.2008, p. 16-18.

Research output: Contribution to journal › Article › peer-review

Tsubouchi, K, Ohkubo, I, Harada, T, Kumigashira, H , Matsumoto, Y, Ohnishi, T, Lippmaa, M, Koinuma, H & Oshima, M 2008, 'Modification of reflection high-energy electron diffraction system for in situ monitoring of oxide epitaxy at high oxygen pressure', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 148, no. 1-3, pp. 16-18. https://doi.org/10.1016/j.mseb.2007.09.005

@article{99d223d2becb4fcea8346ffab9832529,

title = "Modification of reflection high-energy electron diffraction system for in situ monitoring of oxide epitaxy at high oxygen pressure",

abstract = "We have developed a modified single-stage differentially pumped RHEED system for in situ monitoring of oxide epitaxial growth at high oxygen pressure. This modification enables us to operate the RHEED system up to oxygen pressure of 100 mTorr. RHEED intensity oscillations indicative of the layer-by-layer growth were clearly observed during LaNiO3 epitaxial growth at 30 mTorr of pure oxygen ambient. LaNiO3 epitaxial thin films showed both atomically flat surfaces and low resistivity, suggesting that the operative oxygen pressure was high enough to epitaxially grow oxide films under optimum conditions.",

keywords = "Epitaxy of thin films, Oxides, Reflection high-energy electron diffraction (RHEED) techniques",

author = "K. Tsubouchi and I. Ohkubo and T. Harada and H. Kumigashira and Y. Matsumoto and T. Ohnishi and M. Lippmaa and H. Koinuma and M. Oshima",

note = "Funding Information: This work was supported by a Grant-in-Aid for Scientific Research S17101004 and B17760539 from the Japan Society for the Promotion of Science, Yazaki Memorial Foundation for Science and Technology and the Sumitomo Foundation.",

year = "2008",

month = feb,

day = "25",

doi = "10.1016/j.mseb.2007.09.005",

language = "English",

volume = "148",

pages = "16--18",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "1-3",

}

TY - JOUR

T1 - Modification of reflection high-energy electron diffraction system for in situ monitoring of oxide epitaxy at high oxygen pressure

AU - Tsubouchi, K.

AU - Ohkubo, I.

AU - Harada, T.

AU - Kumigashira, H.

AU - Matsumoto, Y.

AU - Ohnishi, T.

AU - Lippmaa, M.

AU - Koinuma, H.

AU - Oshima, M.

N1 - Funding Information: This work was supported by a Grant-in-Aid for Scientific Research S17101004 and B17760539 from the Japan Society for the Promotion of Science, Yazaki Memorial Foundation for Science and Technology and the Sumitomo Foundation.

PY - 2008/2/25

Y1 - 2008/2/25

N2 - We have developed a modified single-stage differentially pumped RHEED system for in situ monitoring of oxide epitaxial growth at high oxygen pressure. This modification enables us to operate the RHEED system up to oxygen pressure of 100 mTorr. RHEED intensity oscillations indicative of the layer-by-layer growth were clearly observed during LaNiO3 epitaxial growth at 30 mTorr of pure oxygen ambient. LaNiO3 epitaxial thin films showed both atomically flat surfaces and low resistivity, suggesting that the operative oxygen pressure was high enough to epitaxially grow oxide films under optimum conditions.

AB - We have developed a modified single-stage differentially pumped RHEED system for in situ monitoring of oxide epitaxial growth at high oxygen pressure. This modification enables us to operate the RHEED system up to oxygen pressure of 100 mTorr. RHEED intensity oscillations indicative of the layer-by-layer growth were clearly observed during LaNiO3 epitaxial growth at 30 mTorr of pure oxygen ambient. LaNiO3 epitaxial thin films showed both atomically flat surfaces and low resistivity, suggesting that the operative oxygen pressure was high enough to epitaxially grow oxide films under optimum conditions.

KW - Epitaxy of thin films

KW - Oxides

KW - Reflection high-energy electron diffraction (RHEED) techniques

UR - http://www.scopus.com/inward/record.url?scp=38949205874&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38949205874&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2007.09.005

DO - 10.1016/j.mseb.2007.09.005

M3 - Article

AN - SCOPUS:38949205874

VL - 148

SP - 16

EP - 18

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-3

ER -

Modification of reflection high-energy electron diffraction system for in situ monitoring of oxide epitaxy at high oxygen pressure

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this