Abstract
We have developed a modified single-stage differentially pumped RHEED system for in situ monitoring of oxide epitaxial growth at high oxygen pressure. This modification enables us to operate the RHEED system up to oxygen pressure of 100 mTorr. RHEED intensity oscillations indicative of the layer-by-layer growth were clearly observed during LaNiO3 epitaxial growth at 30 mTorr of pure oxygen ambient. LaNiO3 epitaxial thin films showed both atomically flat surfaces and low resistivity, suggesting that the operative oxygen pressure was high enough to epitaxially grow oxide films under optimum conditions.
Original language | English |
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Pages (from-to) | 16-18 |
Number of pages | 3 |
Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
Volume | 148 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2008 Feb 25 |
Externally published | Yes |
Keywords
- Epitaxy of thin films
- Oxides
- Reflection high-energy electron diffraction (RHEED) techniques
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering